Method for soft-programming an electrically erasable nonvolatile memory device, and an electrically erasable nonvolatile memory device implementing the soft-programming method
    1.
    发明申请
    Method for soft-programming an electrically erasable nonvolatile memory device, and an electrically erasable nonvolatile memory device implementing the soft-programming method 有权
    用于软编程电可擦除非易失存储器件的方法,以及实现软编程方法的电可擦除非易失性存储器件

    公开(公告)号:US20040223361A1

    公开(公告)日:2004-11-11

    申请号:US10779856

    申请日:2004-02-17

    CPC classification number: G11C16/12

    Abstract: Described herein is a method for soft-programming an electrically erasable nonvolatile memory device, wherein soft-programming is carried out with a soft-programming multiplicity equal to twice that used for writing data in the memory device until the current absorbed during soft-programming is smaller than or equal to the maximum current which is available for writing operations and which can be generated within the memory device, and with a soft-programming multiplicity equal to the one used for writing data in the memory device in the case where the current absorbed during soft-programming with double multiplicity is greater than the maximum current which is available for writing operations and which can be generated within the memory device.

    Abstract translation: 这里描述了一种用于软编程电可擦除非易失性存储器件的方法,其中以软编程多重性等于用于在存储器件中写入数据的两倍的软编程来执行软编程,直到在软编程期间吸收的电流为 小于或等于可用于写入操作并且可以在存储器件内产生的最大电流,并且在电流吸收的情况下具有与用于在存储器件中写入数据的软编程多重性相等的软编程倍数 在具有双重多重性的软编程期间,大于可用于写入操作的最大电流,并且可以在存储器件内生成。

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