公开(公告)号：US20150219693A1

公开(公告)日：2015-08-06

申请号：US14615196

申请日：2015-02-05

Applicant: STMicroelectronics S.r.I.

Inventor： Dario Sutera ,  Davide Giuseppe Patti ,  Valeria Cinnera Martino

IPC: G01R15/20 ,  G01R19/00 ,  G01R15/18

CPC classification number: G01R15/202 ,  G01R15/18 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/07

Abstract: The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.

Abstract translation: 半导体集成器件具有导电区域，例如外部接触焊盘，被配置为被被测量的电流穿过。 磁性材料的集中器部分地围绕导电区域并且具有在限定气隙区域的位置处的环形形状，其中布置有敏感区域，该敏感区域是导电的并且通常是掺杂半导体材料，例如多晶硅。 该器件集成在由衬底形成的芯片和绝缘层中，敏感区域和集中器形成在绝缘层中。

公开(公告)号：US20130099792A1

公开(公告)日：2013-04-25

申请号：US13654891

申请日：2012-10-18

Applicant: STMicroelectronics S.r.I.

Inventor： Davide Giuseppe Patti ,  Mario Paparo ,  Domenico Rossi

IPC: H01T13/40 ,  F02P17/12

CPC classification number: H01T13/40 ,  F02P2017/125 ,  H01T13/60 ,  H01T21/02

Abstract: A spark plug, including an insulator embedding a first metallic electrode axially extending therethrough from a high voltage outer end terminal to the center of the inner end of the insulator from which it protrudes; a metallic ground electrode isolated from the first electrode and having an extended inner termination facing toward the first electrode extending from the insulator tip for defining therebetween a spark gap, a resistive element connected to the ground electrode such that upon mounting the spark plug in an internal combustion engine, the ground electrode electrically connects to the engine body through the resistive element; and to a second outer termination of the ground electrode, adapted to constitute an accessible sensing terminal.

Abstract translation: 一种火花塞，包括绝缘体，其嵌入从高压外端端子轴向延伸穿过其中突出的绝缘体的内端的中心的第一金属电极; 金属接地电极，与第一电极隔离并且具有面向从第一电极延伸的第一电极的延伸的内部端子，其从绝缘体末端延伸以在其间形成火花隙;电阻元件，连接到接地电极，使得在将火花塞安装在内部 内燃机，接地电极通过电阻元件电连接到发动机主体; 并且连接到接地电极的第二外部端子，适于构成可访问感测端子。

公开(公告)号：US09240457B2

公开(公告)日：2016-01-19

申请号：US14162200

申请日：2014-01-23

Applicant: STMicroelectronics S.r.I.

Inventor： Davide Giuseppe Patti ,  Giuditta Settanni

IPC: H01L21/332 ,  H01L29/66 ,  H01L29/10 ,  H01L29/739

CPC classification number: H01L29/66333 ,  H01L29/1095 ,  H01L29/66325 ,  H01L29/7395

Abstract: An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a direction perpendicular to a surface of the drift region and has the first type of conductivity and a lower resistance than the body region. The conduction region includes a plurality of implant regions, arranged at respective depths from the surface of the drift region.

Abstract translation: IGBT晶体管包括漂移区域，容纳在漂移区域中并且具有第一类型的导电性的至少一个体区和在垂直于漂移区域的表面的方向上穿过身体区域的导电区域，并且具有 第一类导电性和比身体区域更低的电阻。 导电区域包括多个植入区域，其布置在距漂移区域的表面相应的深度处。