公开(公告)号：US20040129989A1

公开(公告)日：2004-07-08

申请号：US10650452

申请日：2003-08-27

Applicant: STMicroelectronics S.r.I. ,  Nokia Corporation

Inventor： Sarah Zerbini ,  Angelo Merassi ,  Guido Spinola Durante ,  Biagio De Masi

IPC: G01L001/06 ,  G01P015/03 ,  H01L023/00 ,  H04Q007/34 ,  G01B005/30

CPC classification number: G01P1/127 ,  G01P15/06 ,  G01P15/0802 ,  G01P15/0891 ,  G01P15/18 ,  G01P2015/0814 ,  H01H1/0036 ,  H01H35/146

Abstract: An inertial sensor with failure threshold includes a first body and a second body, which can move relative to one another and are constrained by a plurality of elastic elements, and a sample element connected between the first body and the second body and shaped so as to be subjected to a stress when the second body is outside of a relative resting position with respect to the first body. The sample element has at least one weakened region. The sensor may also include additional sample elements connected between the first and second bodies.

Abstract translation: 具有故障阈值的惯性传感器包括第一主体和第二主体，其可以相对于彼此移动并被多个弹性元件约束;以及样本元件，其连接在第一主体和第二主体之间，并且成形为 当第二主体相对于第一主体位于相对静止位置之外时受到应力。 样品元件具有至少一个弱化区域。 传感器还可以包括连接在第一和第二主体之间的附加样本元件。

公开(公告)号：US20040121504A1

公开(公告)日：2004-06-24

申请号：US10650275

申请日：2003-08-27

Applicant: STMicroelectronics S.r.l. ,  Nokia Corporation

Inventor： Sarah Zerbini ,  Angelo Merassi ,  Guido Spinola Durante ,  Biagio De Masi

IPC: H01L021/66 ,  G01R031/26 ,  H01L021/00

CPC classification number: H01H1/0036 ,  G01P1/023 ,  G01P15/06 ,  G01P15/0802 ,  G01P15/0891 ,  G01P15/18 ,  G01P2015/0814 ,  H01H35/146

Abstract: A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.

Abstract translation: 用于制造具有故障阈值的惯性传感器的方法包括在半导体晶片的衬底的顶部上形成嵌入在牺牲区域中的样品元件的步骤，所述样品元件构造成在预选应变下断裂。 该方法还包括在牺牲区域的顶部上形成连接到样品元件的主体并蚀刻牺牲区域以释放身体和样品元件。 该方法还可以包括在基底上形成连接到身体的附加样品元件。