公开(公告)号：US20220068395A1

公开(公告)日：2022-03-03

申请号：US17407903

申请日：2021-08-20

Applicant: STMicroelectronics S.r.l.

Inventor： Marcella CARISSIMI ,  Fabio Enrico Carlo DISEGNI ,  Chantal AURICCHIO ,  Cesare TORTI ,  Davide MANFRE' ,  Laura CAPECCHI ,  Emanuela CALVETTI ,  Stefano ZANCHI

IPC: G11C16/10 ,  G11C16/28 ,  G11C16/24 ,  G11C16/30 ,  G11C7/04

Abstract: A memory device includes programmable memory cells and a programming circuit for programming a selected memory cell to a target logic state by applying one or more programming current pulses. A temperature sensor operates to sense a temperature of the memory device. A reading circuit reads a current logic state of the selected memory cell after a predetermined programming current pulse of the programming current pulses. The reading circuit includes a sensing circuit that senses a current logic state of the selected memory cell according to a comparison between a reading electric current depending on the current logic state of the selected memory cell and a reference current. An adjusting circuit adjusts one or the other of the reading electric current and the reference electric current to be provided to the sensing circuit according to the temperature of the memory device.