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公开(公告)号:US20220065923A1
公开(公告)日:2022-03-03
申请号:US17406962
申请日:2021-08-19
Applicant: STMicroelectronics S.r.l.
Inventor: Mirko DONDINI , Roberto CRISAFULLI , Calogero Andrea TRECARICHI , Vincenzo RANDAZZO
IPC: G01R31/28
Abstract: An electronic device such as an e-fuse includes analog circuitry configured to be set to one or more self-test configurations. To that effect the device has self-test controller circuitry in turn including: an analog configuration and sensing circuit configured to set the analog circuitry to one or more self-test configurations and to sense test signals occurring in the analog circuitry set to such self-test configurations, a data acquisition circuit configured to acquire and convert to digital the test signals sensed at the analog sensing circuit, and a fault event detection circuit configured to check the test signals converted to digital against reference parameters. The device includes integrated therein a self-test controller configured to control parts or stages of the device to configure circuits, acquire data and control test execution under the coordination of a test sequencer.
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公开(公告)号:US20230187922A1
公开(公告)日:2023-06-15
申请号:US18064861
申请日:2022-12-12
Inventor: Vincenzo RANDAZZO , Alberto MARZO , Giovanni SUSINNA , Vanni POLETTO , Antoine PAVLIN , CalogeroAndrea TRECARICHI , Mirko DONDINI , Roberto CRISAFULLI , Enrico CASTRO , Romeo LETOR
IPC: H02H3/08 , H02H1/00 , H03K17/687 , H03K19/20
CPC classification number: H02H3/08 , H02H1/0007 , H03K17/687 , H03K19/20
Abstract: Embodiments are directed to electronic fuse devices and systems. One such electronic fuse includes current sensing circuitry that senses a current in a conductor coupled between a power supply and a load, and generates a current sensing signal indicative of the sensed current. I2t circuitry receives the current sensing signal and determines whether the sensed current exceeds an I2t curve of the conductor. The electronic fuse further includes at least one of external MOSFET temperature sensing circuitry that senses a temperature of an external MOSFET coupled to the conductor, low current bypass circuitry that supplies a reduced current to the load in a low power consumption mode during which the external MOSFET is in a non-conductive state, or desaturation sensing circuitry that senses a drain-source voltage of the external MOSFET.
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