公开(公告)号：US20030185047A1

公开(公告)日：2003-10-02

申请号：US10319439

申请日：2002-12-12

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Osama Khouri ,  Ferdinando Bedeschi ,  Giorgio Bosisio ,  Fabio Pellizzer

IPC: G11C011/00

CPC classification number: G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

Abstract: The phase-change nonvolatile memory array is formed by a plurality of memory cells extending in a first and in a second direction orthogonal to each other. A plurality of column-selection lines extend parallel to the first direction. A plurality of word-selection lines extend parallel to the second direction. Each memory cell includes a PCM storage element and a selection transistor. A first terminal of the selection transistor is connected to a first terminal of the PCM storage element, and the control terminal of the selection transistor is connected to a respective word-selection line. A second terminal of the PCM storage element is connected to a respective column-selection line, and a second terminal of the selection transistor is connected to a reference-potential region while reading and programming the memory cells.

Abstract translation: 相变非易失性存储器阵列由在彼此正交的第一和第二方向上延伸的多个存储单元形成。 多个列选择线平行于第一方向延伸。 多个字选择线平行于第二方向延伸。 每个存储单元包括PCM存储元件和选择晶体管。 选择晶体管的第一端子连接到PCM存储元件的第一端子，并且选择晶体管的控制端子连接到相应的字选择线。 PCM存储元件的第二端子连接到相应的列选择线，并且在读取和编程存储器单元的同时，选择晶体管的第二端子连接到参考电位区域。