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    Semiconductor phase change memory using face center cubic crystalline phase change material
    2.
    发明授权
    Semiconductor phase change memory using face center cubic crystalline phase change material 有权
    半导体相变存储器采用面中心立方晶相变材料

    公开(公告)号：US08699267B2

    公开(公告)日：2014-04-15

    申请号：US13910237

    申请日：2013-06-05

    Applicant: Ovonyx, Inc.

    Inventor： Charles H. Dennison ,  Stephen J. Hudgens

    IPC: G11C11/00

    CPC classification number: H01L45/065 ,  G11C13/0004 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  Y10S977/754

    Abstract: In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. In one embodiment, a face centered cubic chalcogenide structure may be utilized.

    Abstract translation: 根据一些实施例，可以形成相变存储器，其中减少了编程体积相变材料之外的区域中的热导率。 这可能会降低所得相变存储器的功耗。 功耗的降低可以通过在编程体积之外形成很少或不混合的相变材料的不同层来实现。 在一个实施方案中，可以使用面心立方硫属元素化合物结构。

    Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
    3.
    发明申请
    Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof 有权
    亚光刻接触结构，具有优化的加热器形状的相变存储单元及其制造方法

    公开(公告)号：US20040012009A1

    公开(公告)日：2004-01-22

    申请号：US10371154

    申请日：2003-02-20

    Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

    Inventor： Giulio Casagrande ,  Roberto Bez ,  Fabio Pellizzer

    IPC: H01L047/00 ,  H01L021/76

    CPC classification number: G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

    Abstract: An electronic semiconductor device has a sublithographic contact area between a first conductive region and a second conductive region. The first conductive region is cup-shaped and has vertical walls which extend, in top plan view, along a closed line of elongated shape. One of the walls of the first conductive region forms a first thin portion and has a first dimension in a first direction. The second conductive region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first and the second conductive regions are in direct electrical contact at their thin portions and form the sublithographic contact area. The elongated shape is chosen between rectangular and oval elongated in the first direction. Thereby, the dimensions of the contact area remain approximately constant even in presence of a small misalignment between the masks defining the conductive regions.

    Abstract translation: 电子半导体器件具有在第一导电区域和第二导电区域之间的亚光刻接触面积。 第一导电区域是杯状的并且具有垂直壁，其在顶部平面图中沿着细长形状的封闭线延伸。 第一导电区域的一个壁形成第一薄部分并且具有在第一方向上的第一尺寸。 第二导电区域具有第二薄部分，该第二薄部分具有横向于第一尺寸的第二方向的第二亚光刻尺寸。 第一和第二导电区域在其薄部分处直接电接触并形成亚光刻接触区域。 细长形状选择在第一方向上伸长的矩形和椭圆形之间。 因此，即使在限定导电区域的掩模之间存在小的不对准的情况下，接触区域的尺寸也保持近似恒定。

    Phase change memory cell and manufacturing method thereof using minitrenches
    9.
    发明申请
    Phase change memory cell and manufacturing method thereof using minitrenches 有权
    相变存储单元及其制造方法

    公开(公告)号：US20030231530A1

    公开(公告)日：2003-12-18

    申请号：US10372761

    申请日：2003-02-20

    Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

    Inventor： Roberto Bez ,  Fabio Pellizzer ,  Marina Tosi ,  Romina Zonca

    IPC: G11C029/00

    CPC classification number: H01L45/06 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691

    Abstract: The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.

    Abstract translation: 相变存储单元由电阻元件和相变材料的存储区形成。 电阻元件具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 并且所述存储区域具有第二薄部分，所述第二薄部分具有横向于所述第一尺寸的第二方向的第二亚光刻尺寸。 第一薄部分和第二薄部分直接电接触并限定亚光刻延伸部分的接触面积。 第二薄部分被由限定光刻开口的模具层围绕的氧化物间隔部分侧向限定。 通过间隔物形成技术在形成光刻开口之后形成间隔部分。

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