公开(公告)号：US20230194787A1

公开(公告)日：2023-06-22

申请号：US18167392

申请日：2023-02-10

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Frédéric BOEUF ,  Luca Maggi

IPC: G02B6/124 ,  G02B6/34 ,  G02B6/43 ,  G02B6/30 ,  G02B6/12 ,  G02B6/136

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/43 ,  G02B6/30 ,  G02B6/12004 ,  G02B6/136 ,  G02B2006/12061

Abstract: A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

公开(公告)号：US20150093067A1

公开(公告)日：2015-04-02

申请号：US14492435

申请日：2014-09-22

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS SA

Inventor： Jean-Robert MANOUVRIER ,  Frédéric BOEUF

IPC: G02F1/225

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F2001/212

Abstract: An electro-optical phase shifter to be located in an optical waveguide may include a rib of a semiconductor material extending along a length of the optical waveguide and a control structure configured to modify a concentration of carriers in the rib according to a control voltage present between first and second control terminals of the phase shifter. The control structure may include a conductive layer covering a portion of the rib and electrically connected to a first of the control terminals. An insulating layer may be configured to electrically isolate the conductive layer from the rib.

Abstract translation: 位于光波导中的电光移相器可以包括沿着光波导的长度延伸的半导体材料的肋，以及控制结构，其被配置为根据存在于所述肋之间的控制电压来修改肋中的载流子的浓度 移相器的第一和第二控制端子。 控制结构可以包括覆盖肋的一部分并电连接到第一控制端的导电层。 绝缘层可以被配置为将导电层与肋电隔离。

公开(公告)号：US20170299809A1

公开(公告)日：2017-10-19

申请号：US15132408

申请日：2016-04-19

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Frédéric BOEUF ,  Charles BAUDOT

IPC: G02B6/12 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC classification number: G02B6/12004 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L24/14 ,  H01L2924/00014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/13099

Abstract: An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric layer over the second photonic layer, and a first electrically conductive via extending through the dielectric layer and the second photonic layer to couple to the first photonic device, and a second electrically conductive via extending through the dielectric layer and coupling to the second photonic device. The electro-optic device may include a third electrically conductive via extending through the substrate layer, the second photonic layer, and the first photonic layer to couple to the substrate layer.

公开(公告)号：US20170075148A1

公开(公告)日：2017-03-16

申请号：US15084645

申请日：2016-03-30

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles BAUDOT ,  Maurin DOUIX ,  Frédéric BOEUF ,  Sébastien CREMER

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2001/0151

Abstract: An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the single-crystal silicon strip and polysilicon strip may be laterally continued by a respective extension, and a respective electrical contact coupled to each extension.

Abstract translation: E / O相位调制器可以包括具有绝缘衬底，单晶硅条和相同厚度的多晶硅条的波导，并且在绝缘衬底之上掺杂相反导电类型，并且在单晶之间的绝缘界面层 硅带和多晶硅条。 单晶硅带和多晶硅条中的每一个可以通过相应的延伸部横向连续，并且相应的电触点耦合到每个延伸部。