公开(公告)号：US11887982B2

公开(公告)日：2024-01-30

申请号：US17191250

申请日：2021-03-03

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L27/0266 ,  H01L27/0277 ,  H01L27/0629 ,  H02H9/046 ,  H01L28/20

Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.

公开(公告)号：US10515946B2

公开(公告)日：2019-12-24

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US20180269199A1

公开(公告)日：2018-09-20

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/102 ,  H01L27/12 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US10971489B2

公开(公告)日：2021-04-06

申请号：US16406534

申请日：2019-05-08

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/06 ,  H01L49/02

Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.

公开(公告)号：US09997907B2

公开(公告)日：2018-06-12

申请号：US14964704

申请日：2015-12-10

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Boris Heitz ,  Jean Jimenez

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/04 ,  H01L27/0262 ,  H01L27/0285 ,  H02H9/046

Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.

公开(公告)号：US20170148780A1

公开(公告)日：2017-05-25

申请号：US15096975

申请日：2016-04-12

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Jean Jimenez

IPC: H01L27/02 ,  H01L29/744 ,  H01L29/10 ,  H01L29/74

CPC classification number: H01L27/0251 ,  H01L27/0262 ,  H01L29/1095 ,  H01L29/7436 ,  H01L29/744

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

公开(公告)号：US11444077B2

公开(公告)日：2022-09-13

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US10340265B2

公开(公告)日：2019-07-02

申请号：US15694403

申请日：2017-09-01

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02

Abstract: An integrated circuit includes a power supply terminal, a reference terminal, and a signal terminal. A first protection device is coupled between the signal terminal and the power supply terminal, the first protection device including a first MOS transistor. A second protection device is coupled between the signal terminal and the reference terminal, the second protection device including a second MOS transistor. Gates of the MOS transistors are directly or indirectly coupled to the reference terminal. Substrates of the MOS transistors are coupled to the reference terminal via a common resistor.

公开(公告)号：US09899366B2

公开(公告)日：2018-02-20

申请号：US15096975

申请日：2016-04-12

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Jean Jimenez

IPC: H01L29/66 ,  H01L27/02 ,  H01L29/74 ,  H01L29/744 ,  H01L29/10

CPC classification number: H01L27/0251 ,  H01L27/0262 ,  H01L29/1095 ,  H01L29/7436 ,  H01L29/744

Abstract: An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. The gates of the first conductivity type for the thyristors in the sequence are coupled together in order to form a single control gate.

公开(公告)号：US20200098743A1

公开(公告)日：2020-03-26

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87 ,  H01L27/102 ,  H01L27/12

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.