HIGH FREQUENCY ATTENUATOR
    3.
    发明申请
    HIGH FREQUENCY ATTENUATOR 有权
    高频衰减器

    公开(公告)号:US20160164493A1

    公开(公告)日:2016-06-09

    申请号:US14847900

    申请日:2015-09-08

    CPC classification number: H03H11/245 G01R1/06711 H03F3/602 H03F2200/211

    Abstract: An attenuator includes: a first circuit including a common collector or common drain amplifier formed of a first transistor having its control node connected to an input of the attenuator and its emitter or source connected to an intermediate node of the attenuator; and a second circuit including a common collector or common drain amplifier formed of a second transistor having its emitter or source connected to the intermediate node and its control node connected to an output of the attenuator.

    Abstract translation: 衰减器包括:第一电路,包括由第一晶体管形成的公共集电极或公共放电放大器,第一晶体管的控制节点连接到衰减器的输入,其发射极或源极连接到衰减器的中间节点; 以及第二电路,包括由其第二晶体管形成的公共集电极或公共漏极放大器,其第二晶体管的发射极或源极连接到中间节点,其控制节点连接到衰减器的输出。

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