公开(公告)号：US12200927B2

公开(公告)日：2025-01-14

申请号：US17576544

申请日：2022-01-14

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Yosuke Nosho ,  Takashi Ohashi ,  Shohei Kamisaka ,  Takashi Hirotani

IPC: H10B43/23 ,  G11C7/06 ,  G11C7/14 ,  G11C7/18 ,  G11C8/14 ,  H10B41/10 ,  H10B41/23 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27

Abstract: A memory device includes source-drain structure bodies and gate structure bodies arranged along a first direction, and global word lines. The source-drain structure body includes a bit line, and first to third semiconductor layers. The first and second semiconductor layers are of first conductivity type and the first semiconductor layer is connected to the bit line. The third semiconductor layer of a second conductivity type contacts the first and second semiconductor layers. The gate structure body includes a local word line and a charge storage film. A first source-drain structure body includes a bit line forming a first reference bit line. A first global word line connects to the local word lines in the gate structure bodies formed on both sides of the first reference bit line and to the local word lines formed in alternate gate structure bodies that are formed between the remaining plurality of source-drain structure bodies.

公开(公告)号：US20220238536A1

公开(公告)日：2022-07-28

申请号：US17576544

申请日：2022-01-14

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Yosuke Nosho ,  Takashi Ohashi ,  Shohei Kamisaka ,  Takashi Hirotani

IPC: H01L27/1158 ,  H01L27/11519 ,  H01L27/11553 ,  H01L27/11565 ,  G11C7/18 ,  G11C8/14

Abstract: A memory device includes source-drain structure bodies and gate structure bodies arranged along a first direction, and global word lines. The source-drain structure body includes a bit line, and first to third semiconductor layers. The first and second semiconductor layers are of first conductivity type and the first semiconductor layer is connected to the bit line. The third semiconductor layer of a second conductivity type contacts the first and second semiconductor layers. The gate structure body includes a local word line and a charge storage film. A first source-drain structure body includes a bit line forming a first reference bit line. A first global word line connects to the local word lines in the gate structure bodies formed on both sides of the first reference bit line and to the local word lines formed in alternate gate structure bodies that are formed between the remaining plurality of source-drain structure bodies.