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公开(公告)号：US10224435B2
公开(公告)日：2019-03-05
申请号：US15805594
申请日：2017-11-07
Applicant: Samsung Display Co., Ltd.
Inventor： Jee Hoon Kim , Shin Hyuk Yang , Kwang Soo Lee
IPC: H01L29/66 , H01L29/786 , H01L27/12 , H01L27/32
Abstract: An exemplary embodiment of the present disclosure provides a transistor including: a drain electrode; a first insulating member on the drain electrode and having a tilted side wall; a source electrode on the first insulating member; an active member covering the tilted side wall of the first insulating member, a side wall of the source electrode, and a side wall of the drain electrode; a second insulating member covering the source electrode and the active member; and a gate electrode on the second insulating member and overlapping the active member, wherein the active member defines a first channel region adjacent to the drain electrode and a second channel region adjacent to the source electrode, and wherein a width of the first channel region may be greater than that of the second channel region.
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公开(公告)号：US10411046B2
公开(公告)日：2019-09-10
申请号：US15601338
申请日：2017-05-22
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jee Hoon Kim , Shin Hyuk Yang , Yong Hoon Won , Kwang Soo Lee
Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.
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公开(公告)号：US11587975B2
公开(公告)日：2023-02-21
申请号：US16998470
申请日：2020-08-20
Applicant: Samsung Display Co., LTD.
Inventor： Jee Hoon Kim , Jae Seol Cho , Jong Moo Huh , Sung Jae Moon , Hui-Won Yang , Kang Moon Jo
Abstract: A display device includes a substrate; a semiconductor layer disposed on the substrate; a gate insulating film disposed on the semiconductor layer; a gate layer disposed on the gate insulating film and insulated from the semiconductor layer; an insulating film disposed on the semiconductor layer and the gate layer; and a metal layer disposed on the insulating film, wherein the semiconductor layer and the gate layer are electrically connected through the metal layer, and the semiconductor layer overlaps the gate layer in a plan view.
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Patent Agency Ranking
公开(公告)号：US10651210B2
公开(公告)日：2020-05-12
申请号：US16524606
申请日：2019-07-29
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Jee Hoon Kim , Shin Hyuk Yang , Yong Hoon Won , Kwang Soo Lee
IPC: H01L27/12 , H01L27/32 , H01L29/786
Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.
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公开(公告)号：US10170626B2
公开(公告)日：2019-01-01
申请号：US15412278
申请日：2017-01-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Kwang Soo Lee , Shin Hyuk Yang , Doo Hyun Kim , Jee Hoon Kim
Abstract: A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.
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公开(公告)号：US12167639B2
公开(公告)日：2024-12-10
申请号：US17592965
申请日：2022-02-04
Applicant: Samsung Display Co., LTD.
Inventor： Jee Hoon Kim , Shin Hyuk Yang , Hui Won Yang
IPC: H10K59/121 , H10K59/131 , H10K59/35
Abstract: A display device comprises a repair circuit, and a repair circuit connection pattern extending across a pixel and the repair circuit. Each of a first and second subpixels comprises a light emitting element, a first transistor connected thereto, and a second transistor connected to a gate electrode of the first transistor. The repair circuit comprises first and second repair transistors connected to a gate electrode of the first repair transistor. A first source/drain electrode of the first transistor of each of the first and second subpixels is connected to the power line, a second source/drain electrode of the first transistor of each of the first and second subpixels overlaps the repair circuit connection pattern. A first source/drain electrode of the first repair transistor is connected to the power line, and a second source/drain electrode of the first repair transistor overlaps the first repair circuit connection pattern.
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公开(公告)号：US11621312B2
公开(公告)日：2023-04-04
申请号：US17089246
申请日：2020-11-04
Applicant: Samsung Display Co., LTD.
Inventor： Sang Hyung Lim , Jee Hoon Kim , Mi Hyang Sheen , Jin Ho Jang , Myeong Kyu Park , Na Ri Ahn , Hui Won Yang , Doo Hyoung Lee
Abstract: A display device includes a first conductive pattern on a substrate, a first insulating layer on the first conductive pattern, a semiconductor pattern on the first insulating layer, a second insulating layer on the first insulating layer and the semiconductor pattern, and a second conductive pattern on the second insulating layer. A first edge of the first conductive pattern faces a second edge of the second conductive pattern, the first conductive pattern does not overlap the second conductive pattern in an area where the first edge faces the second edge, the semiconductor pattern is in the area where the first edge faces the second edge, the second conductive pattern overlaps the second insulating layer, and the second insulating layer includes a third edge protruding from the second edge of the second conductive pattern.
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公开(公告)号：US10013100B2
公开(公告)日：2018-07-03
申请号：US14847657
申请日：2015-09-08
Applicant: Samsung Display Co., Ltd.
Inventor： Jee Hoon Kim
CPC classification number: G06F3/0416 , G06F3/044 , G06F2203/04103 , G06F2203/04112
Abstract: A touch panel including a substrate a first signal line positioned on the substrate and extending in a first direction while being bent in a second direction several times and a second signal line positioned on the substrate and extending in the second direction while being bent in the first direction intersecting the first direction several times to intersect the first signal line.
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