公开(公告)号：US10411046B2

公开(公告)日：2019-09-10

申请号：US15601338

申请日：2017-05-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Yong Hoon Won ,  Kwang Soo Lee

IPC: H01L27/12 ,  H01L27/32

Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.

公开(公告)号：US10170626B2

公开(公告)日：2019-01-01

申请号：US15412278

申请日：2017-01-23

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kwang Soo Lee ,  Shin Hyuk Yang ,  Doo Hyun Kim ,  Jee Hoon Kim

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/32

Abstract: A transistor panel includes a channel region including an oxide of a first metal, a source region and a drain region, each including the first metal, wherein the channel region is disposed between the source and drain regions, and wherein the channel region is connected to the source and drain regions, an insulation layer disposed on the channel region, an upper electrode disposed on the insulation layer, an interlayer insulation layer disposed on the upper electrode, the source region and the drain region, and a barrier layer including a first portion disposed between the interlayer insulation layer and each of the source and drain regions, wherein the first portion of the barrier layer contacts each of the source and drain regions. The upper electrode and the barrier layer each comprise a second metal.

公开(公告)号：US10224435B2

公开(公告)日：2019-03-05

申请号：US15805594

申请日：2017-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Kwang Soo Lee

IPC: H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: An exemplary embodiment of the present disclosure provides a transistor including: a drain electrode; a first insulating member on the drain electrode and having a tilted side wall; a source electrode on the first insulating member; an active member covering the tilted side wall of the first insulating member, a side wall of the source electrode, and a side wall of the drain electrode; a second insulating member covering the source electrode and the active member; and a gate electrode on the second insulating member and overlapping the active member, wherein the active member defines a first channel region adjacent to the drain electrode and a second channel region adjacent to the source electrode, and wherein a width of the first channel region may be greater than that of the second channel region.

公开(公告)号：US10651210B2

公开(公告)日：2020-05-12

申请号：US16524606

申请日：2019-07-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Yong Hoon Won ,  Kwang Soo Lee

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786

Abstract: A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer, on the first electrode, a second electrode on the spacer, a first active layer contacting the first electrode, the spacer and the second electrode, and a first gate electrode opposite to the first active layer with a first insulating layer interposed therebetween; a storage capacitor including a first storage electrode integrally connected to the first electrode or the second electrode, and a second storage electrode opposite to the first storage electrode with the first insulating layer interposed therebetween, where the second storage electrode is integrally connected to the first gate electrode; and a second transistor electrically connected to the storage capacitor, where the second transistor includes a second active layer extending in a direction intersecting the base substrate.

公开(公告)号：US12167639B2

公开(公告)日：2024-12-10

申请号：US17592965

申请日：2022-02-04

Applicant: Samsung Display Co., LTD.

Inventor： Jee Hoon Kim ,  Shin Hyuk Yang ,  Hui Won Yang

IPC: H10K59/121 ,  H10K59/131 ,  H10K59/35

Abstract: A display device comprises a repair circuit, and a repair circuit connection pattern extending across a pixel and the repair circuit. Each of a first and second subpixels comprises a light emitting element, a first transistor connected thereto, and a second transistor connected to a gate electrode of the first transistor. The repair circuit comprises first and second repair transistors connected to a gate electrode of the first repair transistor. A first source/drain electrode of the first transistor of each of the first and second subpixels is connected to the power line, a second source/drain electrode of the first transistor of each of the first and second subpixels overlaps the repair circuit connection pattern. A first source/drain electrode of the first repair transistor is connected to the power line, and a second source/drain electrode of the first repair transistor overlaps the first repair circuit connection pattern.