公开(公告)号：US20250040360A1

公开(公告)日：2025-01-30

申请号：US18632476

申请日：2024-04-11

Applicant: Samsung Display Co., LTD.

Inventor： Hee Sung YANG ,  Su Kyeong SHIN ,  Woo Jin CHO ,  Sang Gab KIM ,  Joon Hwa BAE

IPC: H10K59/124

Abstract: A display device includes: a substrate; a thin film transistor positioned on the substrate and including a source electrode, a drain electrode, and an active layer positioned between the source electrode and the drain electrode; a gate electrode positioned on the thin film transistor and overlapping the active layer in a plan view; a gate protection layer positioned on the gate electrode and overlapping the active layer in the plan view; an insulating layer positioned on the gate protection layer; and a gate cover layer positioned between side surfaces of the gate electrode and the insulating layer, where the gate cover layer includes a first portion and a second portion spaced apart from the first portion with the gate electrode interposed therebetween, and the first portion and the second portion are in contact with the gate protection layer.

公开(公告)号：US20220199694A1

公开(公告)日：2022-06-23

申请号：US17552198

申请日：2021-12-15

Applicant: Samsung Display Co., LTD.

Inventor： Joon Hwa BAE ,  Bong Gu KANG ,  Woo Jin CHO ,  Seung Bae KANG ,  Hee Sung YANG ,  Byoung Kwon CHOO

IPC: H01L27/32 ,  H01L51/52 ,  H01L25/16 ,  B29C59/02

Abstract: A method of fabricating a display device includes: preparing a substrate including emission areas and a non-emission area between the emission areas; forming a bank on the non-emission area to a first height; forming light conversion patterns on the emission areas to a height equal to or less than the first height; polishing a surface of a light conversion layer including the bank and the light conversion patterns so that the surface of the light conversion layer is flat; and forming a filler layer on a surface of the substrate on which the light conversion layer is provided. The polishing of the light conversion layer includes planarizing the surface of the light conversion layer so that the bank and the light conversion patterns have a second height through chemical mechanical polishing utilizing a metallic slurry.

公开(公告)号：US20190157627A1

公开(公告)日：2019-05-23

申请号：US16007788

申请日：2018-06-13

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Hwa BAE ,  Hyun Jin CHO ,  Byoung Kwon CHOO ,  Woo Jin CHO

IPC: H01L51/56 ,  H01L27/32

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

公开(公告)号：US20200287171A1

公开(公告)日：2020-09-10

申请号：US16883780

申请日：2020-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Hwa BAE ,  Hyun Jin CHO ,  Byoung Kwon CHOO ,  Woo Jin CHO

IPC: H01L51/56 ,  H01L27/32 ,  H01L27/12

Abstract: In a method of manufacturing a display device, the method includes: forming a conductive layer on a base; forming an organic layer, with a hole partially exposing the conductive layer, on the conductive layer; polishing an upper surface of the organic layer; and forming a light emitting element on the polished organic layer.

公开(公告)号：US20180358386A1

公开(公告)日：2018-12-13

申请号：US15971435

申请日：2018-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： BYOUNG KWON CHOO ,  Joon Hwa BAE ,  Hyun Jin CHO ,  Jun Hyuk CHEON ,  Zi Yeon YOON ,  Woo Jin CHO ,  Sung Hwan CHOI ,  Jeong Hye CHOI

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  H01L21/321

Abstract: A thin-film transistor (TFT) array substrate is provided. The TFT array substrate includes a base substrate, a semiconductor layer disposed on the base substrate, an insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the insulating layer. A top surface of a portion of the insulating layer overlapping the semiconductor layer in a plan view of the base substrate and a top surface of the gate electrode are placed on the same level.