公开(公告)号：US20160035754A1

公开(公告)日：2016-02-04

申请号：US14585525

申请日：2014-12-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongjo KIM ,  Myounggeun CHA ,  Yoonho KHANG ,  Soyoung KOO

IPC: H01L27/12 ,  H01L21/02 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02686 ,  H01L27/1222 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675

Abstract: Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Abstract translation: 本发明提供一种半导体器件，其包括在衬底上并包括倾斜表面的缓冲层; 位于缓冲层上的晶体硅层; 位于结晶硅层上同时与晶体硅层绝缘的栅电极; 以及源极电极和漏极电极，其电连接到晶体硅层，基板和倾斜表面之间的角度在约17.5度至小于约70度的范围内。

公开(公告)号：US20210343822A1

公开(公告)日：2021-11-04

申请号：US17223505

申请日：2021-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Kyungjin JEON ,  Soyoung KOO ,  Eok Su KIM ,  Hyungjun KIM ,  Yunyong NAM ,  Jun Hyung LIM

IPC: H01L27/32

Abstract: An electronic apparatus includes a first transistor including a first oxide semiconductor pattern, a second transistor including a second oxide semiconductor pattern, a blocking layer including a conductive material, a signal line including a first line and a second line which are disposed on different layers, and a bridge pattern electrically connected to each of the first transistor, the first line of the signal line, and the second line of the signal line, wherein the first line of the signal line and the blocking layer are disposed on a same layer, and the second line of the signal line and the first oxide semiconductor pattern are disposed on a same layer.