公开(公告)号：US20210384229A1

公开(公告)日：2021-12-09

申请号：US17320963

申请日：2021-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Sunwoo LEE ,  Kihyun KIM ,  Younggil PARK ,  Seulgi LEE ,  Geunhyuk CHOI ,  Jaebum HAN

IPC: H01L27/12 ,  H01L29/786

Abstract: A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.

公开(公告)号：US20210375950A1

公开(公告)日：2021-12-02

申请号：US17144696

申请日：2021-01-08

Applicant: Samsung Display Co., Ltd.

Inventor： Jaebum HAN ,  Bohwa KIM ,  Younggil PARK ,  Junghwa PARK ,  Nari AHN ,  Sooim JEONG

IPC: H01L27/12

Abstract: A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.