公开(公告)号：US20150200304A1

公开(公告)日：2015-07-16

申请号：US14458415

申请日：2014-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Won KIM ,  KAP SOO YOON ,  Jiyun HONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

Abstract: A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.

Abstract translation: 制造薄膜晶体管基板的方法包括在绝缘基板上设置氧化物半导体层，对氧化物半导体层进行热处理工艺，提供对准标记，源电极，漏电极和氧化物半导体图案 在热处理过程之后，在热处理工艺之后提供栅电极，并提供连接到漏电极的像素电极。