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    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20170077144A1

    公开(公告)日：2017-03-16

    申请号：US15342756

    申请日：2016-11-03

    Applicant: Samsung Display Co., Ltd.

    Inventor： Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

    IPC: H01L27/12 ,  H01L21/768

    CPC classification number: H01L27/124 ,  H01L21/76834 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.

    Abstract translation: 一种基板，包括栅极布线和设置在基板上的栅极电极的栅极布线，设置在与栅极布线相同的层上的存储线，设置在栅极布线和存储线上的栅极绝缘层，设置的氧化物半导体层图案 在栅极绝缘层上，包括与栅极线交叉的数据线的数据布线，设置在氧化物半导体层图案的一侧上的源电极和设置在氧化物半导体层的另一侧上的漏极，以及包括 设置在所述存储线和所述数据线之间并且部分地重叠所述数据线和所述存储线的第一蚀刻停止部。

    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    显示面板及其制造方法

    公开(公告)号：US20150144940A1

    公开(公告)日：2015-05-28

    申请号：US14458152

    申请日：2014-08-12

    Applicant: Samsung Display Co., LTD.

    Inventor： Ji-Yun HONG ,  Joon-Geol KIM ,  Jin-Won LEE ,  Ki-Won KIM

    IPC: H01L21/66 ,  H01L27/12

    CPC classification number: H01L22/32 ,  G09G3/006 ,  H01L22/14 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259

    Abstract: A display panel includes first to third test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer, and disposed adjacent to the first test pad in the second direction, a third test pad electrically connected to the third test line and disposed adjacent to the first test pad in the first direction, the third test pad and the third test line being formed from a same layer.

    Abstract translation: 显示面板包括连接到每个数据线的第一至第三测试线，沿第二方向延伸并且沿第一方向布置，第一测试焊盘，电连接到第一测试线，第一测试焊盘和第一测试 线路由相同的层形成，第二测试焊盘通过形成在第一绝缘层上的接触孔电连接到第二测试线，并且沿第二方向设置成与第一测试焊盘相邻，第三测试焊盘电连接到 第三测试线并​​且在第一方向上与第一测试焊盘相邻设置，第三测试焊盘和第三测试线由相同的层形成。

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220384491A1

    公开(公告)日：2022-12-01

    申请号：US17886489

    申请日：2022-08-12

    Applicant: Samsung Display Co., Ltd.

    Inventor： Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

    IPC: H01L27/12 ,  H01L29/786 ,  H01L21/768

    Abstract: A substrate including a first signal line and a first electrode disposed on the substrate, an oxide semiconductor layer pattern overlapping the first electrode, an insulating layer disposed between the first electrode and the oxide semiconductor layer pattern, a second signal line intersecting the first signal line, a second electrode electrically connected to the oxide semiconductor layer pattern, a third electrode electrically connected to the oxide semiconductor layer pattern and spaced apart from the second electrode, and an insulator comprising a first portion disposed between the first signal line and the second signal line, and at least partially overlapping with both of the first signal line and the second signal line.

    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20180247877A1

    公开(公告)日：2018-08-30

    申请号：US15964544

    申请日：2018-04-27

    Applicant: Samsung Display Co., Ltd.

    Inventor： Ji-Yun HONG ,  Joon-Geol KIM ,  Jin-Won LEE ,  Ki-Won KIM

    IPC: H01L21/66 ,  H01L27/12 ,  G09G3/00

    Abstract: A display panel includes first and second test lines connected to the each of data lines, extending in the second direction, and arranged in the first direction, a first test pad electrically connected to the first test line, the first test pad and the first test line being formed from a same layer, and a second test pad electrically connected to the second test line through a contact hole formed through a first insulation layer and disposed adjacent to the first test pad in the second direction.

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20190355752A1

    公开(公告)日：2019-11-21

    申请号：US16438385

    申请日：2019-06-11

    Applicant: Samsung Display Co., Ltd.

    Inventor： Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

    IPC: H01L27/12

    Abstract: A substrate including a gate line and a gate electrode disposed on a substrate, an oxide semiconductor layer pattern overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer pattern, a data line intersecting the gate line, a source electrode electrically connected to the oxide semiconductor layer pattern, a drain electrode electrically connected to the oxide semiconductor layer, the drain electrode spaced apart from the source electrode, and an insulating pattern including a first portion, which is disposed between the gate line and the data line and at least partially overlaps with both of the gate line and the data line.

    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US20150311230A1

    公开(公告)日：2015-10-29

    申请号：US14793183

    申请日：2015-07-07

    Applicant: Samsung Display Co., Ltd.

    Inventor： Young-Wook LEE ,  Woo-Geun LEE ,  Ki-Won KIM ,  Hyun-Jung LEE ,  Ji-Soo OH

    IPC: H01L27/12

    CPC classification number: H01L27/124 ,  H01L21/76834 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/7869 ,  H01L29/78693

    Abstract: A method of manufacturing a thin film transistor (TFT) array substrate includes forming a gate line and a gate electrode on a substrate, forming a gate-insulating layer and an oxide semiconductor layer on the gate line and the gate electrode, forming etch stop patterns at a thin-film transistor area and an area where the gate line and the data line overlap each other, forming a data conductor on the oxide semiconductor layer and the etch stop patterns, the data conductor comprising a source electrode and a drain electrode that constitute a TFT together with the gate electrode, and forming a data line extending in a direction intersecting the gate line.

    Abstract translation: 制造薄膜晶体管（TFT）阵列基板的方法包括在基板上形成栅极线和栅电极，在栅极线和栅电极上形成栅极绝缘层和氧化物半导体层，形成蚀刻停止图案 在薄膜晶体管区域和栅极线和数据线彼此重叠的区域中，在氧化物半导体层和蚀刻停止图案上形成数据导体，数据导体包括源电极和漏极，构成 TFT与栅极电极一起形成，并且在与栅极线相交的方向上形成数据线。

    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND FABRICATING METHOD OF THE THIN FILM TRANSISTOR SUBSTRATE
    10.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND FABRICATING METHOD OF THE THIN FILM TRANSISTOR SUBSTRATE 有权
    薄膜晶体管基板，包括其的显示装置和薄膜晶体管基板的制造方法

    公开(公告)号：US20150200304A1

    公开(公告)日：2015-07-16

    申请号：US14458415

    申请日：2014-08-13

    Applicant: Samsung Display Co., Ltd.

    Inventor： Ki-Won KIM ,  KAP SOO YOON ,  Jiyun HONG

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

    Abstract: A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.

    Abstract translation: 制造薄膜晶体管基板的方法包括在绝缘基板上设置氧化物半导体层，对氧化物半导体层进行热处理工艺，提供对准标记，源电极，漏电极和氧化物半导体图案 在热处理过程之后，在热处理工艺之后提供栅电极，并提供连接到漏电极的像素电极。

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