公开(公告)号：US20240063308A1

公开(公告)日：2024-02-22

申请号：US18501614

申请日：2023-11-03

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H01L29/78618 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/66969 ,  H01L21/02565

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

公开(公告)号：US20180061860A1

公开(公告)日：2018-03-01

申请号：US15791492

申请日：2017-10-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae KIM ,  Bo-Yong CHUNG ,  Hai-Jung IN ,  Dong-Gyu KIM

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L27/32

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.

公开(公告)号：US20150108454A1

公开(公告)日：2015-04-23

申请号：US14516889

申请日：2014-10-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Bae KIM

IPC: H01L27/32 ,  H01L21/02 ,  H01L21/266 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

Abstract translation: 本发明提供一种薄膜晶体管，其包括在第一硅有源层和第二硅有源层之间的空间中包括第一硅有源层，第二硅有源层和氧化物有源层的有源层，活性层上的栅电极 层，其间设置有栅极绝缘层，以及源电极和漏电极，其中层间绝缘层设置在栅电极和源漏电极之间，源极和漏极与第一硅有源层和第一硅有源层接触， 第二硅活性层。

公开(公告)号：US20140354711A1

公开(公告)日：2014-12-04

申请号：US14211451

申请日：2014-03-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hai-Jung IN ,  Jung-Bae KIM ,  Bo-Yong CHUNG

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G2300/0814 ,  G09G2300/0852 ,  G09G2300/0866 ,  G09G2320/0233 ,  G09G2320/0285 ,  G09G2320/0295 ,  G09G2320/043

Abstract: An organic light emitting display device includes pixels, a scan driver, a memory configured to store pixel data containing information indicative of threshold voltages and mobilities of first transistors in the pixels, a timing controller configured to modify one or more bits of first data to generate second data, the first data modified in response to the pixel data, a data driver configured to generate data signals based on the second data, and a control driver configured to supply a first control signal to a first control line commonly coupled to the pixels and a second control signal to a second control line, wherein each of the pixels is configured to store a data signal of a current frame and to emit light corresponding to a data signal of a previous frame.

Abstract translation: 有机发光显示装置包括像素，扫描驱动器，存储器，被配置为存储包含指示像素中的第一晶体管的阈值电压和迁移率的信息的像素数据;定时控制器，被配置为修改第一数据的一个或多个位以产生 第二数据，响应于像素数据修改的第一数据，被配置为基于第二数据生成数据信号的数据驱动器和被配置为将第一控制信号提供给通常耦合到像素的第一控制线的控制驱动器，以及 到第二控制线的第二控制信号，其中每个像素被配置为存储当前帧的数据信号并且发射与先前帧的数据信号相对应的光。

公开(公告)号：US20140353605A1

公开(公告)日：2014-12-04

申请号：US14055039

申请日：2013-10-16

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae KIM ,  Bo-Yong CHUNG ,  Hai-Jung IN ,  Dong-Gyu KIM

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/124 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/78645

Abstract: A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the semiconductor layer, a second insulating layer covering the first gate electrode and the first insulating layer, a second gate electrode on the second insulating layer and overlapping the semiconductor layer and the first gate electrode, a third insulating layer covering the second gate electrode, a first contact hole defined in the first insulating layer, the second insulating layer and the third insulating layer, and through which a portion of the semiconductor layer is exposed, and a source electrode and a drain electrode connected to the semiconductor layer through the first contact hole.

Abstract translation: 薄膜晶体管包括衬底，衬底上的半导体层，覆盖衬底和半导体层的第一绝缘层，第一绝缘层上的与半导体层重叠的第一栅电极，覆盖第一栅极的第二绝缘层 电极和第一绝缘层，在第二绝缘层上的第二栅电极，与半导体层和第一栅电极重叠，覆盖第二栅电极的第三绝缘层，限定在第一绝缘层中的第一接触孔，第二绝缘层 绝缘层和第三绝缘层，半导体层的一部分露出，以及通过第一接触孔与半导体层连接的源电极和漏电极。

公开(公告)号：US20170278980A1

公开(公告)日：2017-09-28

申请号：US15622680

申请日：2017-06-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung-Bae KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

公开(公告)号：US20150028327A1

公开(公告)日：2015-01-29

申请号：US14330859

申请日：2014-07-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae KIM ,  Bo-Yong CHUNG ,  Hae-Yeon LEE ,  Yong-Jae KIM

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L21/00 ,  H01L21/16 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening.

Abstract translation: 薄膜晶体管包括基板，栅电极，缓冲层，栅极绝缘层，有源层，蚀刻停止层，源电极和漏电极。 栅电极形成在基板上。 缓冲层部分地覆盖栅电极的两侧部分。 栅极绝缘层覆盖栅电极和缓冲层。 有源层形成在栅绝缘层上。 蚀刻停止层形成在有源层上，并且在有源层上具有第一开口和第二开口。 源电极形成在蚀刻停止层上，并通过第一开口与有源层接触。 漏电极形成在蚀刻停止层上，并通过第二开口与有源层接触。

公开(公告)号：US20140354517A1

公开(公告)日：2014-12-04

申请号：US14250742

申请日：2014-04-11

Applicant: Samsung Display Co., Ltd.

Inventor： Bo-Yong CHUNG ,  Hai-Jung IN ,  Jung-Bae KIM

IPC: G09G3/32

CPC classification number: G09G3/3258 ,  G09G3/3233 ,  G09G2300/0852 ,  G09G2300/0861

Abstract: A pixel includes an organic light emitting diode (OLED) having a cathode electrode coupled to a second power supply, a pixel circuit configured to control an amount of current supplied to the OLED to correspond to a previous data signal, and a driver configured to store a present data signal supplied from a data line and to supply the previous data signal to the pixel circuit. The OLED, pixel circuit, and driver may be controlled by signals in a frame that includes first through fourth periods, the second power supply may be set to a first voltage in the first and second periods and to a second voltage in the third and fourth periods, and the first voltage may be a voltage at which the OLED does not emit light and the second voltage may be a voltage at which the OLED emits light.

Abstract translation: 像素包括具有耦合到第二电源的阴极的有机发光二极管（OLED），被配置为控制提供给OLED的电流量以对应于之前的数据信号的像素电路，以及被配置为存储 从数据线提供的当前数据信号，并将先前的数据信号提供给像素电路。 OLED，像素电路和驱动器可以由包括第一至第四周期的帧中的信号控制，第二电源可以被设置为第一和第二周期中的第一电压，以及第三和第四周期中的第二电压 并且第一电压可以是OLED不发光的电压，第二电压可以是OLED发光的电压。

公开(公告)号：US20210328075A1

公开(公告)日：2021-10-21

申请号：US17360582

申请日：2021-06-28

Applicant: Samsung Display Co., Ltd.

Inventor： Jung-Bae KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively.

公开(公告)号：US20160012768A1

公开(公告)日：2016-01-14

申请号：US14737883

申请日：2015-06-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hai-Jung IN ,  Dong-Gyu KIM ,  Jung-Bae KIM ,  Yong-Sung PARK ,  Bo-Yong CHUNG

IPC: G09G3/32

CPC classification number: G09G3/3225 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2320/0223 ,  G09G2320/0233 ,  G09G2330/00

Abstract: A display device includes a display panel, a data driver, a scan driver, and a power supply. The display panel includes power voltage lines and pixels coupled to data lines and scan lines. The data driver supplies data voltages to the data lines. The scan driver provides scan signals to the scan lines. The power supply supplies a power voltage to the power voltage lines. The display panel includes a compensation resistance coupled between s pixels and one of the power voltage lines.

Abstract translation: 显示装置包括显示面板，数据驱动器，扫描驱动器和电源。 显示面板包括电源电压线和耦合到数据线和扫描线的像素。 数据驱动器将数据电压提供给数据线。 扫描驱动器向扫描线提供扫描信号。 电源为电源电压线提供电源电压。 显示面板包括耦合在s像素和电源电压线之一之间的补偿电阻。