公开(公告)号：US20240372045A1

公开(公告)日：2024-11-07

申请号：US18421690

申请日：2024-01-24

Applicant: Samsung Display Co., LTD.

Inventor： Kyeong Woo JANG ,  Se Wan SON ,  Sung Ho KIM ,  Min Woo WOO ,  Seung Hyun LEE ,  Wang Woo LEE ,  Ji Seon LEE ,  Sug Woo JUNG ,  Hye Ri CHO

IPC: H01L33/54 ,  H01L25/075

Abstract: A display device includes a substrate including a display area surrounded by a non-display area, a bank structure disposed on the substrate in the display area and including a plurality of openings, a plurality of light emitting elements disposed in the openings, a first dam disposed on the substrate in the non-display area and spaced apart from the bank structure, and a second dam spaced apart from the first dam in the non-display area, wherein the bank structure includes a first bank layer and a second bank layer disposed on the first bank layer, wherein the first dam includes a first sub-dam structure and a second sub-dam structure disposed on the first sub-dam structure, and the second bank layer includes tips protruding from sidewalls of the first bank layer, and the second sub-dam structure includes tips protruding from sidewalls of the first sub-dam structure.

公开(公告)号：US20210210518A1

公开(公告)日：2021-07-08

申请号：US16986933

申请日：2020-08-06

Applicant: Samsung Display Co., LTD.

Inventor： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Chang Ho YI

IPC: H01L27/12 ,  G09G3/32

Abstract: A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.

公开(公告)号：US20210257426A1

公开(公告)日：2021-08-19

申请号：US17160562

申请日：2021-01-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Tae Sik KIM ,  Hee Yeon KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Kyeong Woo JANG ,  Sug Woo JUNG

IPC: H01L27/32 ,  H01L29/786

Abstract: A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers lire first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.

公开(公告)号：US20230171994A1

公开(公告)日：2023-06-01

申请号：US17879051

申请日：2022-08-02

Applicant: Samsung Display Co., Ltd.

Inventor： Wang Woo LEE ,  Sung Ho KIM ,  Seok Je SEONG ,  Jin Sung AN ,  Min Woo WOO ,  Seung Hyun LEE ,  Ji Seon LEE ,  Yoon-Jong CHO

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5284 ,  H01L27/3234 ,  H01L27/3276

Abstract: The present disclosure relates to a light emitting display device that includes a transparent display area including a light transmission area and a normal display area, wherein the transparent display area includes: an anode including an opening; a first light blocking part filling the opening; and a second light blocking part positioned along an exterior side of the anode. A height of a highest part of the first light blocking part is different than a height of a highest part of the second light blocking part.