公开(公告)号：US20220216284A1

公开(公告)日：2022-07-07

申请号：US17469269

申请日：2021-09-08

Applicant: Samsung Display Co., LTD.

Inventor： Youngjae JEON ,  Woogeun LEE ,  Jong-In KIM ,  Jin-Won LEE

IPC: H01L27/32 ,  G09G3/3233

Abstract: A display device includes a driving transistor on a substrate, a light emitting element disposed on the driving transistor, and a lower electrode disposed between the substrate and the driving transistor. The driving transistor includes an active pattern and a gate electrode. The active pattern includes a first region, a second region, and a channel region between the first region and the second region. The light emitting element is electrically connected to the second region of the active pattern. The lower electrode overlaps the channel region of the active pattern and provides a back bias voltage to the driving transistor.

公开(公告)号：US20240276794A1

公开(公告)日：2024-08-15

申请号：US18529388

申请日：2023-12-05

Applicant: Samsung Display Co., LTD.

Inventor： Sunggwon MOON ,  Donghan KANG ,  Jeehoon KIM ,  Seungsok SON ,  Shinhyuk YANG ,  Woogeun LEE

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/123 ,  H10K59/131 ,  H10K71/20

CPC classification number: H10K59/124 ,  H10K59/1201 ,  H10K59/123 ,  H10K59/131 ,  H10K71/20

Abstract: A display apparatus includes: a transistor disposed above a substrate and including a semiconductor layer, a gate electrode overlapping the semiconductor layer, and at least one source-drain electrode; a first inorganic insulating layer disposed above the transistor; a first organic insulating layer disposed above the first inorganic insulating layer; a power line disposed above the first organic insulating layer and including a first conductive layer and a second conductive layer on the first conductive layer; and a light-emitting diode disposed above the second organic insulating layer and including a pixel electrode, an opposite electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode.

公开(公告)号：US20230123185A1

公开(公告)日：2023-04-20

申请号：US17878449

申请日：2022-08-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun KIM ,  Seulki KIM ,  Kapsoo YOON ,  Woogeun LEE ,  Seungha CHOI ,  Yeeun KANG ,  Shoyeon KIM ,  Seungrae KIM ,  Donghyun WON ,  Kwangsoo LEE

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a semiconductor layer arranged on a substrate and including a channel area and a source area and a drain area respectively arranged at both sides of the channel area, the semiconductor layer including an opening portion arranged to be adjacent to one of the source area and the drain area, an electrode overlapping in a plan view and electrically connected to one of the source area and the drain area, and an insulating pattern arranged between the semiconductor layer and the electrode, wherein a first edge of the electrode adjacent to the opening portion is spaced apart from the opening portion, and an edge portion of the insulating pattern adjacent to the opening portion is spaced apart from the opening portion.

公开(公告)号：US20190341463A1

公开(公告)日：2019-11-07

申请号：US16293560

申请日：2019-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seokhwan BANG ,  Soojung CHAE ,  Kapsoo YOON ,  Woogeun LEE ,  Sunghoon LIM

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.