公开(公告)号：US20220130930A1

公开(公告)日：2022-04-28

申请号：US17500446

申请日：2021-10-13

Applicant: Samsung Display Co., Ltd.

Inventor： Shinhyuk YANG ,  Donghan KANG ,  Jeehoon KIM ,  Junki LEE ,  Jongmoo HUH

IPC: H01L27/32 ,  H01L29/786

Abstract: A display device including a display area, a peripheral area adjacent to the display area, light-emitting diodes disposed in the display area, transistors electrically connected to the light-emitting diodes, and a pad section including a pad electrode having a multi-layered structure, the pad electrode being disposed in the peripheral area. The pad electrode includes a main metal layer, a first conductive layer on an upper surface of the main metal layer, the first conductive layer including a conductive oxide, and an auxiliary layer on a lower surface of the main metal layer.

公开(公告)号：US20240276794A1

公开(公告)日：2024-08-15

申请号：US18529388

申请日：2023-12-05

Applicant: Samsung Display Co., LTD.

Inventor： Sunggwon MOON ,  Donghan KANG ,  Jeehoon KIM ,  Seungsok SON ,  Shinhyuk YANG ,  Woogeun LEE

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/123 ,  H10K59/131 ,  H10K71/20

CPC classification number: H10K59/124 ,  H10K59/1201 ,  H10K59/123 ,  H10K59/131 ,  H10K71/20

Abstract: A display apparatus includes: a transistor disposed above a substrate and including a semiconductor layer, a gate electrode overlapping the semiconductor layer, and at least one source-drain electrode; a first inorganic insulating layer disposed above the transistor; a first organic insulating layer disposed above the first inorganic insulating layer; a power line disposed above the first organic insulating layer and including a first conductive layer and a second conductive layer on the first conductive layer; and a light-emitting diode disposed above the second organic insulating layer and including a pixel electrode, an opposite electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode.

公开(公告)号：US20150123099A1

公开(公告)日：2015-05-07

申请号：US14462863

申请日：2014-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Young Jun SHIN ,  Jeehoon KIM ,  Sehun PARK ,  Jaehwan OH ,  Guanghai KIM ,  Byoungki KIM ,  Wonkyu LEE

IPC: H01L27/32 ,  G02F1/1362 ,  H01L29/423 ,  H01L23/36 ,  H01L29/417

CPC classification number: G02F1/136213 ,  G02F1/133385 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L23/3677 ,  H01L27/0211 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A thin film transistor includes a semiconductor pattern on a base substrate, the semiconductor pattern including an input area, an output area, and a channel area between the input area and the output area, a first insulating layer covering the semiconductor pattern, a control electrode on the first insulating layer, the control electrode overlapping the channel area, a second insulating layer covering the control electrode, an input electrode connected to the input area, an output electrode connected to the output area, and a heat discharge electrode on the second insulating layer, the heat discharge electrode being connected to the control electrode.

Abstract translation: 薄膜晶体管包括在基底基板上的半导体图案，所述半导体图案包括输入区域，输出区域和输入区域与输出区域之间的沟道区域，覆盖半导体图案的第一绝缘层，控制电极 在所述第一绝缘层上，所述控制电极与所述沟道区域重叠，覆盖所述控制电极的第二绝缘层，连接到所述输入区域的输入电极，连接到所述输出区域的输出电极，以及所述第二绝缘层上的放热电极 所述放热电极与所述控制电极连接。

公开(公告)号：US20170330924A1

公开(公告)日：2017-11-16

申请号：US15427111

申请日：2017-02-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jeehoon KIM ,  Shinhyuk YANG ,  Doohyun KIM ,  Kwangsoo LEE ,  Inyoung JUNG

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78642 ,  H01L29/7869 ,  H01L51/5203

Abstract: A thin film transistor includes a substrate and a gate electrode disposed over the substrate. The gate electrode includes a center part and a peripheral part configured to at least partially surround the center part. The thin film transistor further includes a gate insulating layer disposed below the gate electrode and a first electrode insulated from the gate electrode by the gate insulating layer. The first electrode has at least a portion thereof overlapping the center part. The thin film transistor additionally includes a spacer disposed below the first electrode and a second electrode insulated from the first electrode by the spacer. The second electrode has at least a portion thereof overlapping the peripheral part. The thin film transistor further includes a semiconductor layer connected to the first and second electrodes, and insulated from the gate electrode by the gate insulating layer.