Abstract:
A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm2 and at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.
Abstract translation:根据本发明的示例性实施方案的薄膜的形成方法包括以大约1.5至大约3W / cm 2的功率密度和处于该范围内的惰性气体的压力形成薄膜 大约0.2至大约0.3Pa。这个过程产生一个非晶金属薄膜阻挡层,防止相邻层的不期望的扩散,即使该阻挡层比许多传统的阻挡层薄。
Abstract:
A display device includes a driving transistor on a substrate, a light emitting element disposed on the driving transistor, and a lower electrode disposed between the substrate and the driving transistor. The driving transistor includes an active pattern and a gate electrode. The active pattern includes a first region, a second region, and a channel region between the first region and the second region. The light emitting element is electrically connected to the second region of the active pattern. The lower electrode overlaps the channel region of the active pattern and provides a back bias voltage to the driving transistor.
Abstract:
Exemplary embodiments of the present invention disclose a liquid crystal display (LCD) and a method of manufacturing the same. The LCD may have a display area and a peripheral area. An organic layer of the peripheral area may be patterned using a half-tone mask, and a protrusion member may be formed in the peripheral area. Accordingly, the thin film transistor array panel and the corresponding substrate may be prevented from being temporary adhered in the peripheral area such that the density of the liquid crystal molecules filled in the peripheral area may be uniformly maintained and the display quality of the liquid crystal display may be improved.
Abstract:
An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.
Abstract:
A display device includes gate lines, data lines, first wires and second wires extending in the directions of the gate lines and data lines, and pixels having a first subpixel and a second subpixel each. The first subpixel has a first subpixel electrode and a first switching element, and the second subpixel has a second subpixel electrode and second and third switching elements. The control terminals of the three switching elements are connected to the same gate line, and the input terminals of the first and second switching elements are connected to the same data line. The first and second switching elements have output terminals connected to the first and second subpixel electrodes, respectively. The second switching element's output terminal connects to the third switching element, which has an output terminal connected to a second wire. The first wires and the second wires are connected in a pixel.
Abstract:
A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
Abstract:
A display device includes a semiconductor layer of a driving transistor; a semiconductor layer of a switching transistor; a semiconductor layer of an initialization transistor; a gate electrode of the driving transistor overlapping a semiconductor layer of the driving transistor; a lower storage electrode connected to the semiconductor layer of the switching transistor; an upper storage electrode connected to the semiconductor layer of the driving transistor, a light blocking pattern, and the semiconductor layer of the initialization transistor, and overlapping the lower storage electrode; a semiconductor layer of a first auxiliary transistor adjacent the semiconductor layer of the switching transistor and/or the semiconductor layer of the initialization transistor; a first electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor; and a second electrode of the first auxiliary transistor connected to the semiconductor layer of the first auxiliary transistor.
Abstract:
A mother substrate for a display device includes: a first mother substrate and a second mother substrate including a plurality of panel regions and facing each other; a first contact electrode and a second contact electrode on the first mother substrate; a common electrode, a first voltage application electrode and a second voltage application electrode separated from each other and on the second mother substrate; and a liquid crystal layer between the first mother substrate and the second mother substrate. The first voltage application electrode is connected to the first contact electrode, and the second voltage application electrode is connected to the second contact electrode. The first voltage application electrode is applied with a first voltage, and the second voltage application electrode is applied with a second voltage different from the first voltage.