公开(公告)号：US09081122B2

公开(公告)日：2015-07-14

申请号：US13746397

申请日：2013-01-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun-Eok Shin ,  Dae-Woo Lee ,  Won-Pil Lee ,  Ho-Jin Yoon ,  Yong-Woo Park ,  Kyung-Min Choi

IPC: H01L33/00 ,  G02B1/00 ,  G02F1/1362 ,  H01L27/32 ,  H01L33/44 ,  H01L51/52 ,  G02B5/20

CPC classification number: G02B1/00 ,  G02B5/206 ,  G02F1/136209 ,  H01L27/3244 ,  H01L27/3272 ,  H01L33/44 ,  H01L51/5284 ,  H01L2924/0002 ,  Y10T428/24942 ,  Y10T428/24975 ,  H01L2924/00

Abstract: A light blocking member including a metal particle and a ceramic material and a display device including the same.

Abstract translation: 包括金属颗粒和陶瓷材料的遮光构件和包括该遮光构件的显示装置。

公开(公告)号：US09024305B2

公开(公告)日：2015-05-05

申请号：US14023666

申请日：2013-09-11

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Beom Choi ,  Hwa-Jin Noh ,  Hyoung-Min Park ,  Yong-Woo Park

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3211 ,  H01L27/3244 ,  H01L27/3258 ,  H01L51/5209 ,  H01L51/5268 ,  H01L51/5275 ,  H01L51/56

Abstract: An organic light emitting diode display includes a substrate, a planarization layer disposed on the substrate, a first electrode disposed on the planarization layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, wherein an uneven pattern is formed on a top surface of the planarization layer, the uneven pattern comprises a strip line having a plurality of thicknesses and widths, and a thickness of the strip line becomes smaller as a distance from a center portion of the first electrode becomes larger.

Abstract translation: 有机发光二极管显示器包括基板，设置在基板上的平坦化层，设置在平坦化层上的第一电极，设置在第一电极上的发射层和设置在发射层上的第二电极，其中不均匀图案 形成在平坦化层的上表面上，不均匀图案包括具有多个厚度和宽度的带状线，并且随着与第一电极的中心部分的距离变大，带状线的厚度变小。

公开(公告)号：US20130149819A1

公开(公告)日：2013-06-13

申请号：US13760683

申请日：2013-02-06

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoung-Bo KIM ,  Yong-Woo Park ,  Chang-Young Jeong ,  Sung-Won Doh ,  Dae-Woo Lee ,  Jong-Mo Yeo

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/3248 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: Aspects of the invention relate to thin film transistors, a method of fabricating the same, and an organic light-emitting diode device using the same. A thin film transistor according to an aspect of the invention includes a semiconductor layer formed from polysilicon in which a grain size deviation is within a range of substantially ±10%. Accordingly, aspects of the invention can improve non-uniformity of image characteristics due to a non-uniform grain size in polysilicon produced by a sequential lateral solidification (SLS) crystallization process.