Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system
    2.
    发明授权
    Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system 有权
    用于监测非晶硅薄膜结晶的方法和系统,以及使用该方法和系统制造薄膜晶体管的方法

    公开(公告)号:US09257288B2

    公开(公告)日:2016-02-09

    申请号:US14022126

    申请日:2013-09-09

    CPC classification number: H01L21/268 H01L21/02532 H01L21/02667 H01L22/12

    Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

    Abstract translation: 公开了一种用于监测非晶硅(a-Si)薄膜的结晶的方法和系统,以及通过使用该方法和系统制造薄膜晶体管(TFT)的方法。 监测a-Si薄膜结晶的方法包括:将来自光源的光照射到监测a-Si薄膜上,使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火,同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。

    METHOD AND SYSTEM FOR MONITORING CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILM, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR BY USING THE METHOD AND SYSTEM
    3.
    发明申请
    METHOD AND SYSTEM FOR MONITORING CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILM, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR BY USING THE METHOD AND SYSTEM 有权
    用于监测非晶硅薄膜的结晶的方法和系统,以及使用方法和系统制造薄膜晶体管的方法

    公开(公告)号:US20140329343A1

    公开(公告)日:2014-11-06

    申请号:US14022126

    申请日:2013-09-09

    CPC classification number: H01L21/268 H01L21/02532 H01L21/02667 H01L22/12

    Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

    Abstract translation: 公开了一种用于监测非晶硅(a-Si)薄膜的结晶的方法和系统,以及通过使用该方法和系统制造薄膜晶体管(TFT)的方法。 监测a-Si薄膜结晶的方法包括:将来自光源的光照射到监测a-Si薄膜上,使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火,同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。

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