-
公开(公告)号：US09081122B2
公开(公告)日：2015-07-14
申请号：US13746397
申请日：2013-01-22
Applicant: Samsung Display Co., Ltd.
Inventor： Hyun-Eok Shin , Dae-Woo Lee , Won-Pil Lee , Ho-Jin Yoon , Yong-Woo Park , Kyung-Min Choi
CPC classification number: G02B1/00 , G02B5/206 , G02F1/136209 , H01L27/3244 , H01L27/3272 , H01L33/44 , H01L51/5284 , H01L2924/0002 , Y10T428/24942 , Y10T428/24975 , H01L2924/00
Abstract: A light blocking member including a metal particle and a ceramic material and a display device including the same.
Abstract translation: 包括金属颗粒和陶瓷材料的遮光构件和包括该遮光构件的显示装置。
-
2.发明授权Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system 有权用于监测非晶硅薄膜结晶的方法和系统，以及使用该方法和系统制造薄膜晶体管的方法公开(公告)号：US09257288B2
公开(公告)日：2016-02-09
申请号：US14022126
申请日：2013-09-09
Applicant: Samsung Display Co., LTD.
Inventor： Maidanchuk Ivan , Byung-Soo So , Dong-Hyun Lee , Won-Pil Lee
IPC: H01L21/66 , H01L21/268 , H01L21/00 , H01L21/02
CPC classification number: H01L21/268 , H01L21/02532 , H01L21/02667 , H01L22/12
Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.
Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。
-
3.发明申请METHOD AND SYSTEM FOR MONITORING CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILM, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR BY USING THE METHOD AND SYSTEM 有权用于监测非晶硅薄膜的结晶的方法和系统，以及使用方法和系统制造薄膜晶体管的方法公开(公告)号：US20140329343A1
公开(公告)日：2014-11-06
申请号：US14022126
申请日：2013-09-09
Applicant: Samsung Display Co., Ltd.
Inventor： Maidanchuk Ivan , Byung-Soo So , Dong-Hyun Lee , Won-Pil Lee
IPC: H01L21/66 , G01J3/44 , H01L21/268
CPC classification number: H01L21/268 , H01L21/02532 , H01L21/02667 , H01L22/12
Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.
Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。
-
-
Search Results
3
records
(took 0.012 seconds)
