公开(公告)号：US20230074982A1

公开(公告)日：2023-03-09

申请号：US17546470

申请日：2021-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： MING HE ,  HARSONO SIMKA ,  ANTHONY DONGICK LEE ,  SEOWOO NAM ,  SANG HOON AHN

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L23/535 ,  H01L23/532

Abstract: Integrated circuit devices including a via and methods of forming the same are provided. The methods may include forming a conductive wire structure on a substrate. The conductive wire structure may include a first insulating layer and a conductive wire stack in the first insulating layer, and the conductive wire stack may include a conductive wire and a mask layer stacked on the substrate. The method may also include forming a recess in the first insulating layer by removing the mask layer, the recess exposing the conductive wire, forming an etch stop layer and then a second insulating layer on the first insulating layer and in the recess of the first insulating layer, and forming a conductive via extending through the second insulating layer and the etch stop layer and contacting the conductive wire.