公开(公告)号：US10896951B2

公开(公告)日：2021-01-19

申请号：US16545906

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-bin Song ,  Hei-seung Kim ,  Mirco Cantoro ,  Sang-woo Lee ,  Min-hee Cho ,  Beom-yong Hwang

IPC: H01L29/06 ,  H01L29/786 ,  H01L29/22

Abstract: A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.