公开(公告)号：US11043397B2

公开(公告)日：2021-06-22

申请号：US16509792

申请日：2019-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeong-Dong Lee ,  Min-Su Choi ,  Jun-Hyeok Ahn ,  Sung-Hee Han ,  Ce-Ra Hong

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/033

Abstract: First and second mask layers are formed on a target layer. The second mask layer is patterned to form second mask patterns each of which having a rhomboid shape with a first diagonal length and a second diagonal length. A trimming process is performed on the second mask patterns to form second masks by etch. First portions of first opposite vertices of each second mask pattern are etched more than second portions of second opposite vertices of each second mask pattern. A first diagonal length between the first opposite vertices is greater than a second diagonal length between the second opposite vertices. The first mask layer is patterned to form first masks by etching the first mask layer using the second masks as an etching mask. The target layer is patterned to form target patterns by etching the target layer using the first masks as an etching mask.