公开(公告)号：US20250087584A1

公开(公告)日：2025-03-13

申请号：US18666962

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohyung KIM ,  Chulhae PARK ,  Younghwan SON ,  Sukkang SUNG

IPC: H01L23/528 ,  H01L23/522 ,  H01L25/065 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device includes a first semiconductor structure including, circuit devices on a substrate, a lower interconnection structure, and a capacitor structure on a same level as a level of at least a portion of the lower interconnection structure, and a second semiconductor structure on the first semiconductor structure and including a plurality of memory cells arranged three-dimensionally. The lower interconnection structure includes a lower contact, a lower line on the lower contact, an upper contact on the lower line, and an upper line on the upper contact. The capacitor structure includes first electrode structures extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, second electrode structures positioned alternately alongside the first electrode structures and spaced apart from each other in the second direction, and dielectric layers between the first electrode structures and the second electrode structures.