SEMICONDUCTOR SUBSTRATE TREATMENT SYSTEM

    公开(公告)号:US20210159101A1

    公开(公告)日:2021-05-27

    申请号:US16926956

    申请日:2020-07-13

    Abstract: A semiconductor substrate treatment system includes: a chamber having an internal space defined by a first surface and a second surface of the chamber opposing each other, and a third surface of the chamber connected the first surface and the second surface; a transfer device in a central region of the internal space for transferring a semiconductor substrate; an ionizing device including first and second discharge devices on the second surface for emitting ions having a first polarity and a second polarity, respectively, to charge particles in the internal space with the first and second polarities, and a third discharge device disposed above the transfer device, and configured to emit ions having the first and second polarities together; and first and second dust collecting assemblies on the third surface, facing each other, and configured to collect charged particles by generating electric fields having different polarities.

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