公开(公告)号：US20160225827A1

公开(公告)日：2016-08-04

申请号：US15012604

申请日：2016-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae PARK ,  Kyu-sik KIM ,  Yong-wan JIN ,  Woong CHOI ,  Kwang-hee LEE ,  Do-hwan KIM

IPC: H01L27/30

CPC classification number: H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

Abstract translation: 提供了一种多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次堆叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞 晶体管的IC。