公开(公告)号：US11940620B2

公开(公告)日：2024-03-26

申请号：US17508224

申请日：2021-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changsoon Lim ,  Youngdo Kim ,  Daewon Kang ,  Chansoo Kang ,  Hoonseop Kim ,  Sangki Nam ,  Youngduk Suh ,  Donghyub Lee ,  Jonghun Pi

IPC: G02B27/00 ,  B08B7/00 ,  B08B7/04 ,  G01N33/00 ,  G03F7/00 ,  G06T7/00

CPC classification number: G02B27/0006 ,  B08B7/0035 ,  B08B7/04 ,  G01N33/0027 ,  G03F7/70033 ,  G03F7/7085 ,  G03F7/70925 ,  G06T7/001

Abstract: A method of cleaning a collector of an extreme ultraviolet light source system includes introducing the collector separated from the extreme ultraviolet light source system into a chamber; capturing an optical image of a reflective surface of the collector; measuring a contamination level of the reflective surface by comparing the optical image with a prestored standard image; performing a first cleaning operation if the contamination level exceeds a preset first reference value, the first cleaning operation including cleaning the reflective surface by spraying dry ice particles onto the reflective surface; and performing a second cleaning operation if the contamination level is less than or equal to the preset first reference value. The second cleaning operation includes cleaning the reflective surface by radiating atmospheric plasma onto the reflective surface and measuring a microcontamination level and a damage level of the reflective surface.

公开(公告)号：US11490499B2

公开(公告)日：2022-11-01

申请号：US17242022

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungho Jang ,  Yoonjae Kim ,  Hyuck Shin ,  Donghyub Lee ,  Kul Inn

IPC: H05G2/00 ,  G03F7/20 ,  H01S3/223

Abstract: A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.