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公开(公告)号：US20220115376A1
公开(公告)日：2022-04-14
申请号：US17320711
申请日：2021-05-14
发明人： Cheonbae Kim , Seungjin Kim , Dongkyun Lee
IPC分类号： H01L27/108 , H01L29/78 , H01L49/02
摘要： A semiconductor device is provided. The semiconductor device includes a plurality of lower electrodes arranged on a semiconductor substrate in a honeycomb structure; and a support connected to the plurality of lower electrodes and defining a plurality of open areas through which the plurality of lower electrodes are exposed. A center point of each of the plurality of open areas is arranged at a center point of a triangle formed by center points of three corresponding neighboring lower electrodes among the plurality of lower electrodes.
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公开(公告)号：US11818879B2
公开(公告)日：2023-11-14
申请号：US17901210
申请日：2022-09-01
发明人： Cheonbae Kim , Seungjin Kim , Dongkyun Lee
IPC分类号： H01L27/108 , H01L49/02 , H01L29/78 , H10B12/00
CPC分类号： H10B12/30 , H01L28/60 , H01L29/7802
摘要： A semiconductor device is provided. The semiconductor device includes a plurality of lower electrodes arranged on a semiconductor substrate in a honeycomb structure; and a support connected to the plurality of lower electrodes and defining a plurality of open areas through which the plurality of lower electrodes are exposed. A center point of each of the plurality of open areas is arranged at a center point of a triangle formed by center points of three corresponding neighboring lower electrodes among the plurality of lower electrodes.
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公开(公告)号：US11637174B2
公开(公告)日：2023-04-25
申请号：US17036731
申请日：2020-09-29
发明人： Yoonyoung Choi , SangJae Park , Dongkyun Lee
IPC分类号： H01L49/02 , H01L27/108
摘要： An integrated circuit device including a lower electrode on a substrate, the lower electrode including a first lower electrode portion extending in a first direction perpendicular to a top surface of the substrate and including a first main region and a first top region, and a second lower electrode portion extending in the first direction on the first lower electrode portion and including a second main region and a second top region; a first top supporting pattern surrounding at least a portion of a side wall of the first top region of the first lower electrode portion; and a second top supporting pattern surrounding at least a portion of a side wall of the second top region of the second lower electrode portion, and the second lower electrode portion includes a protrusion protruding outward to the second top supporting pattern.
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公开(公告)号：US11462543B2
公开(公告)日：2022-10-04
申请号：US17320711
申请日：2021-05-14
发明人： Cheonbae Kim , Seungjin Kim , Dongkyun Lee
IPC分类号： H01L27/108 , H01L49/02 , H01L29/78
摘要： A semiconductor device is provided. The semiconductor device includes a plurality of lower electrodes arranged on a semiconductor substrate in a honeycomb structure; and a support connected to the plurality of lower electrodes and defining a plurality of open areas through which the plurality of lower electrodes are exposed. A center point of each of the plurality of open areas is arranged at a center point of a triangle formed by center points of three corresponding neighboring lower electrodes among the plurality of lower electrodes.
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