公开(公告)号：US12272606B2

公开(公告)日：2025-04-08

申请号：US18300983

申请日：2023-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L21/8238 ,  H01L21/762 ,  H01L27/118

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US11062961B2

公开(公告)日：2021-07-13

申请号：US16408912

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/06 ,  H01L29/66 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/118 ,  H01L21/762

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US11658075B2

公开(公告)日：2023-05-23

申请号：US17246778

申请日：2021-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmin Yoo ,  Juyoun Kim ,  Hyungjoo Na ,  Bongseok Suh ,  Jooho Jung ,  Euichul Hwang ,  Sungmoon Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L23/522 ,  H01L29/06 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/118 ,  H01L21/762

CPC classification number: H01L21/823878 ,  H01L21/76224 ,  H01L27/11807 ,  H01L2027/11816 ,  H01L2027/11829 ,  H01L2027/11861

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

公开(公告)号：US09832370B2

公开(公告)日：2017-11-28

申请号：US14802315

申请日：2015-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongho Cho ,  Youngsoo Park ,  Euichul Hwang ,  Myoungjae Lee

IPC: H04N5/228 ,  H04N5/232 ,  A61B5/00 ,  H04N5/345 ,  A61B3/113 ,  A61B8/08 ,  A61B5/11

CPC classification number: H04N5/23219 ,  A61B3/113 ,  A61B5/0037 ,  A61B5/11 ,  A61B8/5207 ,  A61B2576/00 ,  H04N5/3454

Abstract: A cognitive sensor and a method of operating the same. The cognitive sensor includes a sensor unit, which generates electric signals in response to outside stimulations; a signal processing unit, which generates sensed data regarding the outside stimulations by processing electric signals generated by the sensor unit; a cognitive circuit unit, which specifies an area of interest in the sensed data processed by the signal processing unit; and an output unit, which outputs the sensed data generated by the signal processing unit, wherein at least a portion of the sensed data output by the output unit is sensed data regarding the area of interest.