公开(公告)号：US20250129288A1

公开(公告)日：2025-04-24

申请号：US18916329

申请日：2024-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol HAM ,  Byungjoon KANG ,  Giho KO ,  Sungmin KIM ,  Mihyun PARK ,  Insun PARK ,  Jinhye BAE ,  Kum Hee LEE ,  Minhyung CHO ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

Abstract: Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.