公开(公告)号：US20240309298A1

公开(公告)日：2024-09-19

申请号：US18413777

申请日：2024-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyung CHO ,  Minju IM ,  Hyojoong YOON ,  Mihyun PARK ,  Jinhye BAE ,  Taekyung LEE ,  Sangwon BAE

IPC: C11D3/20 ,  C11D3/30 ,  C11D3/39 ,  G03F7/42 ,  H01L21/02

CPC classification number: C11D3/201 ,  C11D3/2017 ,  C11D3/2068 ,  C11D3/30 ,  C11D3/3927 ,  G03F7/425 ,  H01L21/02071 ,  C11D2111/22

Abstract: A stripper composition may include a polar organic solvent, a pH-adjusting agent, and an ammonium salt or a diamine compound, and deionized water (DIW). In the diamine compound, a main chain between amines may have 4 or fewer carbon atoms.

公开(公告)号：US20210020462A1

公开(公告)日：2021-01-21

申请号：US16739409

申请日：2020-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Mihyun PARK ,  Yongsun KO ,  Kwangwook LEE ,  Kuntack LEE ,  Hayoung JEON ,  Yongjhin CHO ,  Jihoon CHA

IPC: H01L21/67 ,  H01L21/02 ,  B08B3/08

Abstract: A substrate cleaning apparatus includes a support inside a chamber to hold a substrate, a first supply source inside the chamber that includes a first nozzle along a first direction and facing an upper surface of the support, the first nozzle to spray polymer and solvent onto the substrate to form a coating, and a second nozzle at an oblique angle to the first direction and facing an edge of the support to inject a hot gas toward the coating to volatilize the solvent, a second supply source inside the chamber and having a third nozzle facing the upper surface of the support to inject a peeling treatment to the coating to peel the coating from the substrate, and a third supply source inside the chamber and facing a lower surface of the support to inject the hot gas to heat a second surface of the substrate.

公开(公告)号：US20250129288A1

公开(公告)日：2025-04-24

申请号：US18916329

申请日：2024-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheol HAM ,  Byungjoon KANG ,  Giho KO ,  Sungmin KIM ,  Mihyun PARK ,  Insun PARK ,  Jinhye BAE ,  Kum Hee LEE ,  Minhyung CHO ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

Abstract: Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.

公开(公告)号：US20240318077A1

公开(公告)日：2024-09-26

申请号：US18612457

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Sungmin KIM ,  Mihyun PARK ,  Jungmin OH ,  Cheol HAM

IPC: C09K13/00 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134

Abstract: An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.

公开(公告)号：US20240059967A1

公开(公告)日：2024-02-22

申请号：US18227454

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daihyun KIM ,  Taesoo KWON ,  Yeonsoek YOO ,  Mihyun PARK ,  Sangwon BAE ,  Hyosan LEE ,  Wook JANG

IPC: C09K13/06 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L29/66795

Abstract: An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.

公开(公告)号：US20210254224A1

公开(公告)日：2021-08-19

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20210238478A1

公开(公告)日：2021-08-05

申请号：US17032306

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung LEE ,  Jung Hun LIM ,  Mihyun PARK ,  Changsu JEON ,  Jung-Min OH ,  Subin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/28

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

公开(公告)号：US20200087798A1

公开(公告)日：2020-03-19

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOULBRAIN CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/311 ,  C23F1/30

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20170297164A1

公开(公告)日：2017-10-19

申请号：US15407569

申请日：2017-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hong KIM ,  Jung-Min OH ,  SeokHoon KIM ,  Chae Lyoung KIM ,  Mihyun PARK ,  Hyosan LEE

IPC: B24B37/20 ,  B08B3/08 ,  B08B3/02 ,  B24B37/005 ,  B05D1/00

CPC classification number: B24B37/20 ,  B05D1/60 ,  B08B3/024 ,  B08B3/08 ,  B24B37/005 ,  C23C16/4407 ,  H01L21/00 ,  H01L21/67

Abstract: Aspects of the inventive concepts provide a cleaning apparatus and a substrate processing system including the same. The cleaning apparatus includes a chuck receiving a substrate, a first nozzle providing first cleaning water or a first organic solvent onto the substrate at a first pressure, and a second nozzle disposed adjacent to the first nozzle. The second nozzle provides a cleaning solution including second cleaning water and a second organic solvent onto the substrate at a second pressure lower than the first pressure.

公开(公告)号：US20170062287A1

公开(公告)日：2017-03-02

申请号：US15175062

申请日：2016-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract translation: 一种基板处理装置及其处理方法，其特征在于，具备使用化学溶液处理基板的基板处理装置，所述化学溶液含有磷酸水溶液和硅化合物; 以及向所述基板处理单元供给所述化学溶液的化学溶液供给体，所述化学溶液供给体包含测定所述化学溶液浓度的浓度测定器，所述浓度测定器包括测定所述化学溶液的水浓度的第一浓度测定器 ; 以及测量化学溶液的硅浓度的第二浓度测量器。