公开(公告)号：US10896966B2

公开(公告)日：2021-01-19

申请号：US16385245

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-jin Lee ,  Bong-soo Kim ,  Ji-young Kim ,  Ho-rim Yoo

IPC: H01L29/423 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device includes a substrate including a first region and a second region, a buried gate structure located on a first recess in the first region of the substrate, and a recess gate structure located on a second recess in the second region of the substrate, wherein the buried gate structure is buried in the substrate, an upper portion of the recess gate structure is not buried in the substrate, and a first work function adjustment layer in the buried gate structure may include a material identical to a material included in a second work function layer of the recess gate structure.