Image sensor
    1.
    发明授权

    公开(公告)号:US11843017B2

    公开(公告)日:2023-12-12

    申请号:US17172250

    申请日:2021-02-10

    Abstract: An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.

    Image sensor
    2.
    发明授权

    公开(公告)号:US12074187B2

    公开(公告)日:2024-08-27

    申请号:US17371424

    申请日:2021-07-09

    Abstract: An image sensor includes a substrate having a first surface and a second surface, which are opposite to each other, the substrate including a unit pixel region including a device isolation pattern adjacent to the first surface and a photoelectric conversion region adjacent to the second surface, a pixel isolation pattern provided in the substrate to define the unit pixel regions, an impurity region in the unit pixel region and being adjacent to a side surface of the device isolation pattern, a gate electrode provided on the first surface, and an auxiliary isolation pattern provided between a first side surface of the gate electrode and the impurity region, when the image sensor is viewed in a plan view. A bottom surface of the auxiliary isolation pattern may be located at a level different from a bottom surface of the device isolation pattern.

    Image sensor including conductive connection pattern

    公开(公告)号:US11502117B2

    公开(公告)日:2022-11-15

    申请号:US16900072

    申请日:2020-06-12

    Abstract: An image sensor includes a substrate having a first surface and a second surface facing each other, a plurality of photoelectric conversion regions disposed in the substrate, an isolation pattern disposed in the substrate between the photoelectric conversion regions, a conductive connection pattern disposed on the isolation pattern and in a trench penetrating the first surface of the substrate, and a first impurity region disposed in the substrate and adjacent to the first surface of the substrate. A first sidewall of the conductive connection pattern is in contact with the first impurity region. A dopant included in the conductive connection pattern includes the same element as an impurity doped in the first impurity region.

    Semiconductor device
    4.
    发明授权

    公开(公告)号:US11348960B2

    公开(公告)日:2022-05-31

    申请号:US16799287

    申请日:2020-02-24

    Abstract: An image sensor is provided. The image sensor includes a substrate and a conductive line pattern. The substrate includes an isolation pattern that extends from a bottom surface of the substrate into the substrate and defines pixel regions, and a photoelectric conversion region and a transistor for each of the pixel regions. The conductive line pattern is disposed on a top surface of the substrate, and vertically overlaps the isolation pattern in plan view and electrically connects to transistors of two or more of the pixel regions.

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