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    Biased band pass filter, dielectric-metal-dielectric-semiconductor
    2.
    发明授权
    Biased band pass filter, dielectric-metal-dielectric-semiconductor 有权

    公开(公告)号：US11996426B2

    公开(公告)日：2024-05-28

    申请号：US17415554

    申请日：2020-02-14

    申请人： Teledyne UK Limited

    发明人： Andrew Harris ,  Andrew Kelt

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14621 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

    摘要： A photodetector comprises a semiconductor substrate having an input surface for receiving illumination, control electrodes for control of photogenerated charge within the substrate and a filter on the radiation input surface of the substrate, the filter comprising a dielectric-metal band pass filter having a metal layer and one or more dielectric layers with one dielectric layer between the substrate surface and the metal layer. A connector is provided for applying a bias voltage to the metal layer with respect to the substrate. In effect, the metal layer of the band pass filter provides two functions. The first function is as part of the ITF filter selecting the wavelength desired for the device. The second function is as a conductive layer allowing a bias to be provided between the substrate and the metal layer thereby producing a field within the surface of the substrate to which the filter is applied.

    Image sensing device
    3.
    发明授权
    Image sensing device 有权

    公开(公告)号：US11961855B2

    公开(公告)日：2024-04-16

    申请号：US17232116

    申请日：2021-04-15

    申请人： SK hynix Inc.

    发明人： Pyong Su Kwag

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14612 ,  H01L27/14831

    摘要： An image sensing device includes a first subpixel block, a second subpixel block, a first conversion gain transistor, and a second conversion gain transistor. The first subpixel block includes a first floating diffusion region and a plurality of unit pixels sharing the first floating diffusion region. The second subpixel block includes a second floating diffusion region coupled to the first floating diffusion region and a plurality of unit pixels sharing the second floating diffusion region. The first conversion gain transistor includes a first impurity region coupled to the first and second floating diffusion regions and a second impurity region coupled to a first conversion gain capacitor. The second conversion gain transistor includes a third impurity region coupled to the second impurity region of the first conversion gain transistor and a fourth impurity region coupled to a second conversion gain capacitor.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240079435A1

    公开(公告)日：2024-03-07

    申请号：US18388333

    申请日：2023-11-09

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： HYOUN-JEE HA ,  CHANGHWA KIM

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14636 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14831

    摘要： An image sensor includes a substrate having a first surface and a second surface that are opposite to each other. The substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface. A pixel isolation pattern is disposed in the substrate and is configured to define the plurality of unit pixel regions. An interconnection layer is disposed on the first surface of the substrate. The interconnection layer includes a conductive structure having a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate. Contacts extend vertically from the connection portion towards the first surface of the substrate. Each of the contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween. The contacts are coupled to the floating diffusion regions, respectively.

    Image sensor including active regions
    5.
    发明授权
    Image sensor including active regions 有权

    公开(公告)号：US11804510B2

    公开(公告)日：2023-10-31

    申请号：US16522533

    申请日：2019-07-25

    申请人： SK hynix Inc.

    发明人： Kyoung-In Lee ,  Sung-Kun Park ,  Sun-Ho Oh

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L27/14831 ,  H01L27/1463 ,  H01L27/14612

    摘要： An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

    IMAGE SENSING DEVICE
    6.
    发明公开
    IMAGE SENSING DEVICE 审中-公开

    公开(公告)号：US20230246058A1

    公开(公告)日：2023-08-03

    申请号：US17993297

    申请日：2022-11-23

    申请人： SK hynix Inc.

    发明人： Jae Hyung JANG

    IPC分类号： H01L27/148 ,  H01L27/146

    CPC分类号： H01L27/14812 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14641 ,  H01L27/14831

    摘要： An image sensing device includes a substrate including a back side structured to receive incident light and a front side opposite to the back side; imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light; a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and a well region disposed between the plurality of conductive contact structures.

    Image sensing device
    7.
    发明授权
    Image sensing device 有权

    公开(公告)号：US11682687B2

    公开(公告)日：2023-06-20

    申请号：US17092738

    申请日：2020-11-09

    申请人： SK hynix Inc.

    发明人： Sun Ho Oh ,  Sung Kun Park ,  Kyoung In Lee

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/1463 ,  H01L27/14612 ,  H01L27/14831 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14641 ,  H01L27/14643

    摘要： An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.