中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

15 records (took 0.015 seconds)

    Image sensors
    1.
    发明授权
    Image sensors 有权

    公开(公告)号：US12136633B2

    公开(公告)日：2024-11-05

    申请号：US17667620

    申请日：2022-02-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungwook Lee

    IPC: H01L27/14 ,  H01L27/146

    Abstract: Image sensors may include a base substrate including a substrate layer, a buried insulation layer on the substrate layer, and a semiconductor layer on the buried insulation layer, a photo sensing device in the substrate layer, a buried impurity region spaced apart from the photo sensing device in an upper portion of the substrate layer, a transfer gate including a vertical gate extending through the semiconductor layer and the buried insulation layer and extending into an inner portion of the substrate layer, which is between the photo sensing device and the buried impurity region, a planar gate on the semiconductor layer, and a gate insulation layer between the substrate layer and the planar gate.

    METHOD AND APPARATUS FOR CONTROLLING MEMORY OPERATION
    3.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING MEMORY OPERATION 审中-公开
    用于控制存储器操作的方法和装置

    公开(公告)号：US20150006762A1

    公开(公告)日：2015-01-01

    申请号：US14316655

    申请日：2014-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keongho Lee ,  Seungbeom Lee ,  Joongbaik Kim ,  Seungwook Lee ,  Chunmok Chung

    IPC: G06F3/06

    CPC classification number: G06F13/1673

    Abstract: A method for controlling a memory operation includes determining a number of commands for each memory address based on information of requests stored in an interface buffer and a scheduler buffer, determining a control state of the memory operation according to a command type with a largest number of commands, and determining types of a request transmitted to the scheduler buffer from the interface buffer and a request output from the scheduler buffer according to a control state of the memory operation. Other embodiments including an apparatus for controlling a memory are also disclosed.

    Abstract translation: 一种用于控制存储器操作的方法包括基于存储在接口缓冲器和调度器缓冲器中的请求的信息来确定每个存储器地址的命令数量，根据具有最大数量的存储器操作的命令类型确定存储器操作的控制状态 命令，以及根据存储器操作的控制状态确定从接口缓冲器发送到调度器缓冲器的请求的类型和从调度器缓冲器输出的请求。 还公开了包括用于控制存储器的装置的其它实施例。

    Electronic system including FPGA and operation method thereof
    4.
    发明授权
    Electronic system including FPGA and operation method thereof 有权

    公开(公告)号：US11012075B2

    公开(公告)日：2021-05-18

    申请号：US16802927

    申请日：2020-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyungdal Kwon ,  Seungwook Lee ,  Youngnam Hwang

    IPC: H03K19/17 ,  G06F30/32 ,  H03K19/1776 ,  G06F30/327

    Abstract: An electronic system and an operation method thereof are disclosed. A method of an electronic system including a field programmable gate array (FPGA) includes: synthesizing, by processing circuitry, code of a high level language into code of a hardware description language; designing, by the processing circuitry, a circuit of an intellectual property (IP) block included in the field programmable gate array according to the code of the hardware description language; and generating, by the processing circuitry, a database containing reference assembly code corresponding to the code of the high level language and information about a circuit configuration of the intellectual property block.

    Method and apparatus for controlling memory operation
    5.
    发明授权
    Method and apparatus for controlling memory operation 有权

    公开(公告)号：US10275371B2

    公开(公告)日：2019-04-30

    申请号：US14316655

    申请日：2014-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keongho Lee ,  Seungbeom Lee ,  Joongbaik Kim ,  Seungwook Lee ,  Chunmok Chung

    IPC: G06F3/06 ,  G06F13/16

    Abstract: A method for controlling a memory operation includes determining a number of commands for each memory address based on information of requests stored in an interface buffer and a scheduler buffer, determining a control state of the memory operation according to a command type with a largest number of commands, and determining types of a request transmitted to the scheduler buffer from the interface buffer and a request output from the scheduler buffer according to a control state of the memory operation. Other embodiments including an apparatus for controlling a memory are also disclosed.

    Complementary metal-oxide-semiconductor image sensors
    7.
    发明授权
    Complementary metal-oxide-semiconductor image sensors 有权
    互补金属氧化物半导体图像传感器

    公开(公告)号：US09508771B2

    公开(公告)日：2016-11-29

    申请号：US14830181

    申请日：2015-08-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungwook Lee ,  Jungchak Ahn ,  Youngwoo Jung

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14689 ,  H01L29/4236

    Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor is provided. The CMOS image sensor may include an epitaxial layer having a first conductivity type and having first and second surfaces, a first device isolation layer extending from the first surface to the second surface to define first and second pixel regions, a well impurity layer of a second conductivity type formed adjacent to the first surface and formed in the epitaxial layer of each of the first and second pixel regions, and a second device isolation layer formed in the well impurity layer in each of the first and second pixel regions to define first and second active portions spaced apart from each other in each of the first and second pixel regions.

    Abstract translation: 提供了互补的金属氧化物半导体（CMOS）图像传感器。 CMOS图像传感器可以包括具有第一导电类型并具有第一和第二表面的外延层，从第一表面延伸到第二表面以限定第一和第二像素区域的第一器件隔离层，第二和第二表面的阱杂质层 导电类型，形成在第一表面附近并形成在第一和第二像素区域中的每一个的外延层中，以及第二器件隔离层，形成在第一和第二像素区域中的每一个中的阱杂质层中，以限定第一和第二像素区域 在第一和第二像素区域中的每一个中彼此间隔开的有源部分。

Patent Agency Ranking