公开(公告)号：US09710747B2

公开(公告)日：2017-07-18

申请号：US14328359

申请日：2014-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daehwan Kang ,  Kyung-chang Ryoo ,  Hyun Goo Jun ,  Hongsik Jeong ,  JaeHee Oh

IPC: G06N3/063 ,  G06N3/04

CPC classification number: G06N3/063 ,  G06N3/049

Abstract: A method of generating neuron spiking pulses in a neuromorphic system is provided which includes floating one or more selected bit lines connected to target cells, having a first state, from among a plurality of memory cells arranged at intersections of a plurality of word lines and a plurality of bit lines; and stepwisely increasing voltages applied to unselected word lines connected to unselected cells, having a second state, from among memory cells connected to the one or more selected bit lines other than the target cells having the first state.

公开(公告)号：US10553606B2

公开(公告)日：2020-02-04

申请号：US15938101

申请日：2018-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Won Kim ,  Hyun Goo Jun

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11565

Abstract: A vertical-type memory device and a manufacturing method thereof, the device including a substrate having a cell array region and a connection region; gate electrode layers stacked on the cell array region and the connection region of the substrate, the gate electrode layers forming a stepped structure in the connection region; a cell channel layer in the cell array region, the cell channel layer passing through the plurality of gate electrode layers; a dummy channel layer in the connection region, the dummy channel layer passing through at least one gate electrode layer of the plurality of gate electrode layers; a cell epitaxial layer disposed below the cell channel layer; and a dummy epitaxial layer disposed below the dummy channel layer, wherein the dummy epitaxial layer has a shape that is different from a shape of the cell epitaxial layer.