公开(公告)号：US20250129267A1

公开(公告)日：2025-04-24

申请号：US18924620

申请日：2024-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonseok KO ,  Jung Hoon LEE ,  Sang Soo JEE ,  Fedosya KALININA ,  Hyune Jea LEE

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. The polishing slurry includes nano-abrasive particles having a Mohs hardness greater than about 5, and soft particles having a Mohs hardness lower than the Mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.

公开(公告)号：US20250011624A1

公开(公告)日：2025-01-09

申请号：US18761170

申请日：2024-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyune Jea LEE ,  Sang Soo JEE ,  Kee Chang LEE ,  Jung Hoon LEE

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing slurry and a method of manufacturing a semiconductor device using the polishing slurry. The polishing slurry includes plate-shaped particles having a Mohs hardness of less than or equal to about 5, and a spherical abrasive. The plate-shaped particles have a thermal conductivity in a dimensional direction of greater than or equal to about 10 W/mK, and the plate-shaped particles have a larger average particle size than the spherical abrasive. Also, the plate-shaped particles and the spherical abrasive are not chemically bonded to the other.