公开(公告)号：US09766540B2

公开(公告)日：2017-09-19

申请号：US14977767

申请日：2015-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Keun Oh ,  Hyungho Ko ,  Inkyun Shin ,  Jaehyuck Choi ,  JunYoul Choi

IPC: G03F1/76 ,  G03F1/48 ,  G03F1/68 ,  G03F1/80 ,  G03F1/38 ,  G03F1/54

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/48 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.

公开(公告)号：US09223199B2

公开(公告)日：2015-12-29

申请号：US14059533

申请日：2013-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong Keun Oh ,  Hyungho Ko ,  Inkyun Shin ,  Jaehyuck Choi ,  JunYoul Choi

IPC: G03F1/50 ,  G03F1/48 ,  G03F1/68 ,  G03F1/80 ,  G03F1/54

CPC classification number: G03F1/76 ,  G03F1/38 ,  G03F1/48 ,  G03F1/54 ,  G03F1/68 ,  G03F1/80

Abstract: A photomask and a method of forming the same, the photomask including a transparent substrate; a light shielding pattern on the transparent substrate, the light shielding pattern including molybdenum and silicon; and an etch stop layer covering at least a sidewall of the light shielding pattern, wherein the etch stop layer has an etch rate lower than an etch rate of the light shielding pattern with respect to an ammonia-based cleaning solution.

Abstract translation: 光掩模及其形成方法，所述光掩模包括透明基板; 透明基板上的遮光图案，包括钼和硅的遮光图案; 以及覆盖所述遮光图案的至少一侧壁的蚀刻停止层，其中所述蚀刻停止层的蚀刻速率低于所述遮光图案相对于氨基清洗溶液的蚀刻速率。