公开(公告)号：US20250118565A1

公开(公告)日：2025-04-10

申请号：US18808273

申请日：2024-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunho Chu ,  Jiwon Shin ,  Kwangyong Lee ,  Minwoo Jeon

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor chip includes grinding a substrate that includes a device region and a scribe lane region, forming a protective coating layer on the substrate, plasma-thinning the substrate, and plasma-sawing the scribe lane region of the substrate. The plasma-thinning of the substrate and the plasma-sawing of the scribe lane region of the substrate are performed in-situ in a same chamber.