公开(公告)号：US20250124565A1

公开(公告)日：2025-04-17

申请号：US18667687

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo Jeon ,  Kanggyune Lee

IPC: G06T7/00

Abstract: Provided is a mark inspection method of a semiconductor package. The method includes receiving a measured image of a semiconductor package comprising a mark including at least one of a figure and a character string, receiving a standard defect image corresponding to the measured image, the standard defect image includes the mark having a defect comprising at least one of misprinting, cutting, blur, noise, displacement, double printing, reverse printing, bay, and thermochromic phenomena, generating a fake image through a deep learning model using a generative adversarial network (GAN) with the measured image and the standard defect image, and comparing the fake image with the measured image.

公开(公告)号：US20250139757A1

公开(公告)日：2025-05-01

申请号：US18754533

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoo Jeon ,  Seunghwan Kim

IPC: G06T7/00 ,  G01N21/95

Abstract: A method of inspecting a semiconductor package includes acquiring an image of a surface of a semiconductor package, classifying a characteristic of a mold bleed present on the surface of the semiconductor package and captured in the image, identifying that the mold bleed is abnormal, and generating an alarm upon identifying that the mold bleed is abnormal.

公开(公告)号：US20250118565A1

公开(公告)日：2025-04-10

申请号：US18808273

申请日：2024-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunho Chu ,  Jiwon Shin ,  Kwangyong Lee ,  Minwoo Jeon

IPC: H01L21/3065 ,  H01L21/683 ,  H01L21/78

Abstract: A method of manufacturing a semiconductor chip includes grinding a substrate that includes a device region and a scribe lane region, forming a protective coating layer on the substrate, plasma-thinning the substrate, and plasma-sawing the scribe lane region of the substrate. The plasma-thinning of the substrate and the plasma-sawing of the scribe lane region of the substrate are performed in-situ in a same chamber.

公开(公告)号：US20240355640A1

公开(公告)日：2024-10-24

申请号：US18436934

申请日：2024-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngja Kim ,  Minwoo Jeon

IPC: H01L21/48 ,  B23K1/012 ,  B23K101/40 ,  H01L21/67

CPC classification number: H01L21/4853 ,  B23K1/012 ,  H01L21/4867 ,  H01L21/67109 ,  B23K2101/40

Abstract: In a method of manufacturing an electronic device, a substrate including a plurality of bonding pads on a first surface thereof is provided. Solder members are attached on the plurality of bonding pads respectively. An airflow control cover is positioned on the first surface of the substrate above the solder members, the airflow control cover including a plurality of vapor passage holes that allows air to flow toward the solder members. The substrate on which the airflow control cover is positioned is loaded into a vapor generating chamber that accommodates a heat transfer fluid therein. The heat transfer fluid is heated to place the heat transfer fluid in a vapor state within the chamber. The solder members are soldered by supplying the heat transfer fluid in the vapor state to surfaces of the solder members through the vapor passage holes of the airflow control cover.