公开(公告)号：US20150287829A1

公开(公告)日：2015-10-08

申请号：US14742710

申请日：2015-06-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGUN KIM ,  Dong-Hyun KIM ,  Hyun-Seung SONG

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L27/088

CPC classification number: H01L29/7851 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66818 ,  H01L29/7848 ,  H01L29/7853 ,  H01L2029/7858

Abstract: A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a channel part on the intermediate part. A width of the intermediate part is less than a width of the base part and greater than a width of the channel part. A gate electrode coves both sidewalls and a top surface of the channel part, and a device isolation pattern covers both sidewalls of the base part and both sidewalls of the intermediate part.