公开(公告)号：US20140103412A1

公开(公告)日：2014-04-17

申请号：US14037691

申请日：2013-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANG-MIN LEE ,  WONJOO KIM ,  DOOCHEOL PARK ,  JUNG BIN YUN ,  JUNGWOOK LIM

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14645

Abstract: A three-dimensional image sensor includes a first photoelectric converter in a first pixel region of a substrate, a second photoelectric converter in a second pixel region of the substrate, a first transfer gate structure disposed on the substrate at one side of the first photoelectric converter, a second transfer gate structure and a drain gate structure disposed on the substrate at opposite sides of the second photoelectric converter and whose gate insulating layers are thinner the gate insulating layer of the first transfer gate structure. The gate insulating layers can be fabricated by forming a first insulating layer on the pixel regions of the substrate, removing part of the first insulating layer from the second pixel region, and subsequently forming a second insulating layer on the substrate including over a part of the first insulating layer which remains on the first pixel region.

Abstract translation: 三维图像传感器包括基板的第一像素区域中的第一光电转换器，基板的第二像素区域中的第二光电转换器，设置在第一光电转换器的一侧的基板上的第一传输栅极结构 ，第二传输栅极结构和漏极栅极结构，其设置在第二光电转换器的相对侧的基板上，栅极绝缘层的厚度较薄，第一传输栅极结构的栅极绝缘层较薄。 栅极绝缘层可以通过在衬底的像素区域上形成第一绝缘层，从第二像素区域去除第一绝缘层的一部分，然后在衬底上形成第二绝缘层来制造，该第二绝缘层包括一部分 第一绝缘层，其保留在第一像素区域上。

公开(公告)号：US20250024176A1

公开(公告)日：2025-01-16

申请号：US18666428

申请日：2024-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGWOOK LIM

IPC: H04N25/772 ,  H10K39/32 ,  H10K39/38

Abstract: An image pixel includes an organic photodiode, a first electrode connected to a first voltage, and a second electrode connected to a second voltage. The first electrode and the second electrode are disposed on a first surface of the organic photodiode, and a read-out circuit is connected to the first electrode and the second electrode. The read-out circuit provides a first data voltage based on a first charge amount provided from the first electrode to a first data line, and provides a second data voltage based on a second charge amount provided from the second electrode to the first data line.

公开(公告)号：US20230253436A1

公开(公告)日：2023-08-10

申请号：US18093035

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOOK LIM ,  EUN SUB SHIM

IPC: H01L27/146 ,  H04N25/59

CPC classification number: H01L27/14643 ,  H04N25/59 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14612

Abstract: Disclosed is an image sensor which includes a photo diode that generates charges based on an incident light, a first floating diffusion region that stores the charges generated by the photo diode, a first boosting capacitor that is connected with the first floating diffusion region, a second floating diffusion region that is disposed to be spaced from the first floating diffusion region and includes a first end connected with a gate of a drive transistor, a transfer transistor that electrically connects the photo diode with the first floating diffusion region in response to a transfer signal, and a floating diffusion region transistor that electrically connects the first floating diffusion region with the second floating diffusion region in response to a floating control signal.

公开(公告)号：US20240072092A1

公开(公告)日：2024-02-29

申请号：US18233100

申请日：2023-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNGWOOK LIM

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14636

Abstract: An image sensor includes a first chip including a first substrate having a plurality of pixels, and a first wiring structure, each of the plurality of pixels including first and second isolated photodiodes; a second chip including a second wiring structure, and a second substrate; and a third chip including a third wiring structure, and a third substrate having logic devices, wherein each of the plurality of pixels includes a first floating diffusion node on the first photodiode, a second floating diffusion node on the second photodiode, a third floating diffusion node between the first and second floating diffusion nodes on the second photodiode, and a first switching transistor on the second substrate, and wherein the first switching transistor is connected to the first floating diffusion node through the first and second wiring structures, and the third floating diffusion node through the first and second wiring structures.