公开(公告)号：US20200329206A1

公开(公告)日：2020-10-15

申请号：US16674478

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN SUB SHIM

IPC: H04N5/353 ,  H04N5/341 ,  H04N5/3745 ,  H04N5/355 ,  H04N5/357

Abstract: An image sensor including: a pixel array including a plurality of pixels connected to a plurality of row lines and a plurality of column lines, each of the plurality of pixels including a photodiode for generating an electric charge in response to light, and a pixel circuit having a floating diffusion for storing the electric charge; and a controller configured to adjust a capacitance of the floating diffusion to a first value and obtain a first pixel signal from the pixel circuit during a first time period, adjust the capacitance of the floating diffusion to a second value greater than the first value and obtain a second pixel signal from the pixel circuit during a second time period subsequent to the first time period, and generate a result image using the first pixel signal and the second pixel signal.

公开(公告)号：US20200235148A1

公开(公告)日：2020-07-23

申请号：US16564143

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUN SUB SHIM

IPC: H01L27/146

Abstract: Disclosed is an image sensor including a first device isolation layer in a semiconductor layer and defining a plurality of pixel regions, a first photoelectric conversion device and a second photoelectric conversion device that are in each of the pixel regions, and a second device isolation layer in the semiconductor layer vertically overlapping the first photoelectric conversion device and the second photoelectric conversion device.

公开(公告)号：US20230253436A1

公开(公告)日：2023-08-10

申请号：US18093035

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGWOOK LIM ,  EUN SUB SHIM

IPC: H01L27/146 ,  H04N25/59

CPC classification number: H01L27/14643 ,  H04N25/59 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14612

Abstract: Disclosed is an image sensor which includes a photo diode that generates charges based on an incident light, a first floating diffusion region that stores the charges generated by the photo diode, a first boosting capacitor that is connected with the first floating diffusion region, a second floating diffusion region that is disposed to be spaced from the first floating diffusion region and includes a first end connected with a gate of a drive transistor, a transfer transistor that electrically connects the photo diode with the first floating diffusion region in response to a transfer signal, and a floating diffusion region transistor that electrically connects the first floating diffusion region with the second floating diffusion region in response to a floating control signal.

公开(公告)号：US20230164460A1

公开(公告)日：2023-05-25

申请号：US17991097

申请日：2022-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Park ,  EUN SUB SHIM

IPC: H04N5/235

CPC classification number: H04N25/77 ,  H04N25/773 ,  H04N25/771

Abstract: An image sensor includes a pixel including a first floating diffusion and a second floating diffusion, generating a first pixel signal based on a quantity of charge of the first floating diffusion, and generating a second pixel signal based on the quantity of charge of the first floating diffusion and a quantity of charge of the second floating diffusion; a column line connected to the pixel and transmitting the first pixel signal or the second pixel signal; and a readout circuit connected to the column line and generating an image signal based on a plurality of comparison results including a first comparison result obtained by comparing the first pixel signal with a first reference signal, a second comparison result obtained by comparing the second pixel signal with a first reference signal, and a third comparison result obtained by comparing the second pixel signal with a second reference signal.

公开(公告)号：US20240089626A1

公开(公告)日：2024-03-14

申请号：US18118307

申请日：2023-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN SUB SHIM

IPC: H04N25/709 ,  H04N25/78

CPC classification number: H04N25/709 ,  H04N25/78

Abstract: An image sensor includes: a pixel including a boosting capacitor with one electrode connected to a first node to which a charge generated from a photoelectric element is transmitted, and outputting a pixel voltage based on the first node; a row driver outputting a reset-signal that resets the first node, a boosting control-signal applied to the other electrode, and a transmission-signal transmitting the charge to the first node; a read-out-circuit receiving the pixel voltage as a first-signal before the transmission-signal is output to the pixel, and receiving the pixel voltage as a second-signal after the transmission-signal is output to the pixel. A controller controlling the row driver to change the boosting control-signal from a first-level to a second-level lower than the first-level after changing the reset-signal from an enable to a disable, and controlling the read-out-circuit to receive the first-signal and the second-signal during which the boosting control-signal is at the second-level.

公开(公告)号：US20240022832A1

公开(公告)日：2024-01-18

申请号：US18110038

申请日：2023-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN SUB SHIM

IPC: H04N25/704 ,  H04N25/79 ,  H04N25/772

CPC classification number: H04N25/704 ,  H04N25/79 ,  H04N25/772

Abstract: An image sensor includes; a pixel array including at an auto focusing (AF) pixel and an AF adjacent pixel, which is adjacent to the AF pixel and is configured to share a floating diffusion region with the AF pixel; and a row driver configured to control the pixel array, wherein a first end of a photo diode included in the AF pixel is connected to a first transmission transistor, and a second end of the photo diode included in the AF pixel is connected to a ground through a first signal line, and wherein a first end of a photo diode included in the AF adjacent pixel is connected to a second transmission transistor, and a second end of the photo diode included in the AF adjacent pixel is connected to the row driver through a second signal line.

公开(公告)号：US20220337771A1

公开(公告)日：2022-10-20

申请号：US17565591

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG BIN YUN ,  KYUNGHO LEE ,  EUN SUB SHIM ,  TAESUB JUNG

IPC: H04N5/369 ,  H04N5/3745

Abstract: A camera module includes pixels each including first to fourth sub-pixels, a row driver connected to the pixels through row lines, an analog-to-digital conversion circuit connected to the pixels through column lines and converting signals of the column lines into digital values, and a logic circuit. Each of the first to fourth sub-pixels includes a first region and a second region. Each of the first and second regions includes a photo detector. In response to the row driver activating signals of half or less of the photo detectors included in one pixel among the pixels, the analog-to-digital conversion circuit generates a first signal. The logic circuit generates an auto focus signal based on the first signal.

公开(公告)号：US20210183920A1

公开(公告)日：2021-06-17

申请号：US16997351

申请日：2020-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYUNGHO LEE ,  BUMSUK KIM ,  EUN SUB SHIM

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface with a pixel region having photoelectric conversion regions, a gate electrode disposed on the pixel region and adjacent to the first surface, a first isolation structure extending from the first surface toward the second surface, the first isolation structure comprising a first pixel isolation pattern enclosing the pixel region, and a first inner isolation pattern spaced apart from the first pixel isolation pattern and positioned between the photoelectric conversion regions, and a second isolation structure extending from the second surface toward the first surface with a top surface vertically spaced apart from at least a portion of a bottom surface of the first isolation structure. The bottom surface of the first isolation structure is closer to the second surface of the semiconductor substrate than to the first surface thereof.

公开(公告)号：US20200219910A1

公开(公告)日：2020-07-09

申请号：US16570273

申请日：2019-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： EUN SUB SHIM

IPC: H01L27/146

Abstract: An image sensor is provided comprising a substrate comprising first and second surfaces opposite to each other. A first isolation layer is disposed on the substrate and forms a boundary of a sensing region. A second isolation layer is disposed at least partially in the substrate within the sensing region and has a closed line shape. A photoelectric conversion device is disposed within the closed line shape of the second isolation layer, and a color filter is disposed on the first surface of the substrate.