公开(公告)号：US20220384449A1

公开(公告)日：2022-12-01

申请号：US17735838

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNJUNG KIM ,  HYO-SUB KIM ,  JAY-BOK CHOI ,  YONGSEOK AHN ,  JUNHYEOK AHN ,  KISEOK LEE ,  MYEONG-DONG LEE ,  YOONYOUNG CHOI

IPC: H01L27/108

Abstract: A semiconductor memory device includes a device isolation pattern on a substrate and defining a first active section, a first storage node pad on the first active section, a word line in the substrate and extending across the first active section, a bit line on the first storage node pad and crossing over the word line, a storage node contact on one side of the bit line and adjacent to the first storage node pad, and an ohmic layer between the storage node contact and the first storage node pad. A bottom surface of the ohmic layer is rounded.

公开(公告)号：US20240107743A1

公开(公告)日：2024-03-28

申请号：US17953054

申请日：2022-09-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNHYEOK AHN ,  KISEOK LEE

IPC: H01L27/108

CPC classification number: H01L27/10814 ,  H01L27/10823 ,  H01L27/10897

Abstract: A semiconductor device includes; a substrate including an active region including a first region and a second region, a bitline extending in a first direction on the substrate and electrically connected to the first region of the active region, a spacer structure disposed on a side surface of the bitline, a contact structure disposed on a side surface of the spacer structure and electrically connected to the second region of the active region and a data storage structure disposed on the contact structure and electrically connected to the contact structure. The contact structure includes; a conductive contact layer including a first portion and a second portion disposed on the first portion, a barrier layer surrounding the first portion of the conductive contact layer, and an air gap surrounding the second portion of the conductive contact layer.

公开(公告)号：US20230089688A1

公开(公告)日：2023-03-23

申请号：US17705991

申请日：2022-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNHYEOK AHN ,  HUIJUNG KIM ,  KISEOK LEE ,  MYEONGDONG LEE

IPC: H01L27/108

Abstract: A semiconductor device includes; an active region defined by an isolation film on a substrate, a word line in the substrate, the word line extending in a first direction and crossing the active region, a bit line above the word line and extending in a second direction, a contact between bit lines adjacent in the first direction, the contact connecting the active region and extending in a vertical direction, and a contact fence disposed on each of opposing side surfaces of the contact in the second direction and extending in the vertical direction, wherein the active region has a bar shape extending oblique to the first direction, and the contact fence includes a carbon-containing insulating film.