公开(公告)号：US10249627B2

公开(公告)日：2019-04-02

申请号：US15621315

申请日：2017-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hoon Han ,  Dong Wan Kim ,  Ji Hun Kim ,  Jae Joon Song ,  Hiroshi Takeda

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced apart from the upper interlayer insulating layer is disposed on the substrate. A contact structure penetrating the upper interlayer insulating layer is disposed on the substrate. An upper support layer having a first portion covering an upper surface of the upper interlayer insulating layer, to surround an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and surrounding an upper side surface of the first electrode, is disposed. A dielectric conformally covering the first electrode and a second electrode on the dielectric are disposed.

公开(公告)号：US10134740B2

公开(公告)日：2018-11-20

申请号：US15644877

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Ji Hun Kim ,  Jae Joon Song ,  Hiroshi Takeda ,  Jung Hoon Han

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06 ,  H01L23/528 ,  H01L21/28 ,  H01L21/02

Abstract: A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.